'Semiconductor Device with Dual Metal Silicide Regions and Methods of Making Same' in Patent Application Approval Process

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'Semiconductor Device with Dual Metal Silicide Regions and Methods of Making Same' in Patent Application Approval Process

机译：专利申请批准过程中的“具有双金属硅化物区域的半导体器件及其制造方法”

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2013 MAR 20 (VerticalNews) -- By a News Reporter-Staff News Editor at Journal of Engineering -- Anpatent application by the inventors Scheiper, Thilo (Dresden, DE); Flachowsky, Stefan (Dresden, DE),nfiled on August 25, 2011, was cleared for further review on March 7, 2013, according to news reportingnoriginating from Washington, D.C., by VerticalNews correspondents.

机译：2013年3月20日（VerticalNews）-工程杂志上的新闻记者-工作人员新闻编辑-发明人Scheiper，Thilo（德国德累斯顿）的专利申请; VerticalNews通讯社从华盛顿特区发布的新闻报道称，2011年8月25日提交的Stefan Flachowsky，Stefan先生已于2013年3月7日获准进一步审查。

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《Journal of Engineering》 |2013年第12期|1-3|共3页
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正文语种 eng
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Silicon; Technology; Electronics; Engineering; Semiconductor; Globalfoundries Inc..;

机译：硅;技术;电子产品;工程;半导体;Globalfoundries Inc.;

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'Semiconductor Device with Dual Metal Silicide Regions and Methods of Making Same' in Patent Application Approval Process

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