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Comparison of the Volume of Fluid and CLSVOF Methods for the Assessment of Flow Boiling in Silicon Microgaps

机译：硅微间隙中流体沸腾评估中流体体积和CLSVOF方法的比较

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摘要

The three-dimensional (3D) stacking of integrated circuits (ICs), and emergent microelectronic technologies require low-profile cooling solutions for the removal of relatively high heat fluxes. The flow boiling of dielectric refrigerants represents a feasible alternative to such applications by providing compatibility with the electrical interconnections, relatively uniform temperature profiles, and higher heat transfer coefficients than those obtained with single phase-cooling. Despite important experimental evidence in this area has been recently reported in the literature, the modeling of such has remained in basic and limited forms due to the associated complexities with the physics of two-phase flow with phase-change. In an effort to expand the studied possibilities for the modeling of flow boiling, the present investigation compares two different phase-tracking methods for the analysis of such phenomena: the volume of fluid (VOF) and the coupled level set - volume of fluid (CLSVOF) techniques. These interface tracking and reconstruction techniques are coupled with a phase change model that accounts for the mass and energy transfer source terms to the governing equations. The geometric domain is constituted by a silicon microgap 175 μm high with a substrate thickness of 50 μm, and populated with circular pin fins of 150 μm diameter, where the heat conduction is simultaneously solved with temperature dependent properties. The flow boiling regimes and their spatial and temporal evolution are compared between both methods by maintaining the operating conditions. Results indicate that both methods provide a good capability to predict major two-phase flow regimes observed in experimental studies with these types of arrangements. However, the CLSVOF offers a sharper interface reconstruction than the standard VOF method by predicting bubble nucleation and departure mechanisms more closely to experimental observations.
机译：集成电路（IC）的三维（3D）堆叠以及新兴的微电子技术要求采用薄型冷却解决方案，以去除相对较高的热通量。通过提供与电互连的兼容性，相对均匀的温度曲线以及比用单相冷却获得的传热系数更高的传热系数，介电制冷剂的沸腾沸腾代表了此类应用的可行替代方案。尽管最近在文献中已经报道了该领域的重要实验证据，但是由于与具有相变的两相流的物理学相关联的复杂性，这种模型的建模仍处于基本且有限的形式。为了扩大研究流动沸腾建模的可能性，本研究比较了两种不同的相位跟踪方法来分析这种现象：流体体积（VOF）和耦合液位集-流体体积（CLSVOF） ）技术。这些界面跟踪和重构技术与相变模型相结合，该相变模型考虑了控制方程式的质量和能量传输源项。几何区域由高度为175μm，衬底厚度为50μm的硅微间隙构成，并填充有直径为150μm的圆形针状翅片，其中，导热与温度相关的特性同时得以解决。通过维持操作条件，比较了两种方法之间的沸腾状态及其时空演化。结果表明，这两种方法都提供了良好的能力，可以预测使用这些类型布置的实验研究中观察到的主要两相流态。但是，CLSVOF通过预测气泡成核和离去机制，使其与实验观察结果更加接近，从而提供比标准VOF方法更清晰的界面重建。

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  • 来源
    《Journal of Heat Transfer》 |2017年第11期|111506.1-111506.10|共10页
  • 作者

    Lorenzini Daniel; Joshi Yogendra;

  • 作者单位

    G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, United States;

    G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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