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首页> 外文期刊>Journal of Heat Transfer >Sub-Continuum Simulations of Heat Conduction in Silicon-on- Insulator Transistors
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Sub-Continuum Simulations of Heat Conduction in Silicon-on- Insulator Transistors

机译:绝缘体上硅晶体管中的热传导的子连续模拟

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摘要

The temperature rise in sub-micrometer silicon devices is predicted at present by solving the heat diffusion equation based on the Fourier law. The accuracy of this approach needs to be carefully examined for semiconductor devices in which the channel length is comparable with or smaller than the phonon mean free path. The phonon mean free path in silicon at room temperature is near 300 nm and exceeds the channel length of contem- porary transistors. This work numerically integrates the two-dimensional phonon Boltz- mann transport equation (BTE) within the silicon region of a silicon-on-insulator (SOI) transistor.
机译:目前,通过基于傅立叶定律求解热扩散方程,可以预测亚微米硅器件的温度上升。对于通道长度等于或小于声子平均自由程的半导体器件,需要仔细检查此方法的准确性。室温下硅中的声子平均自由程接近300 nm,超过了现代晶体管的沟道长度。这项工作在绝缘体上硅(SOI)晶体管的硅区内将二维声子玻尔兹曼输运方程(BTE)进行了数值积分。

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