Modeling of Heat Transfer and Kinetics of Physical Vapor Transport Growth of Silicon Carbide Crystals

Q.-S. Chen; H. Zhang; V. Prasad

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Modeling of Heat Transfer and Kinetics of Physical Vapor Transport Growth of Silicon Carbide Crystals

机译：碳化硅晶体的传热模型和物理气相传输增长的动力学

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Wide-bandgap silicon carbide (SiC) substrates are needed for fabrication of electronic and optoelectronic devices and circuits that can function under high-temperature, high- power, high-frequency conditions. The bulk growth of SiC single crystal by physical vapor transport (PVT), modified Lely method involves sublimation of a SiC powder charge, mass transfer through an inert gas environment, and condensation on a seed. Temperature distribution in the growth system and growth rate profile on the crystal surface are critical to the quality and size of the grown SiC single crystal.

机译：需要宽带隙的碳化硅（SiC）衬底来制造可在高温，高功率，高频条件下工作的电子和光电设备和电路。 SiC单晶通过物理气相传输（PVT），改良的Lely方法的整体生长包括升华SiC粉末装料，通过惰性气体环境进行质量转移以及在种子上凝结。生长系统中的温度分布和晶体表面上的生长速率曲线对生长的SiC单晶的质量和尺寸至关重要。

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来源
《Journal of Heat Transfer》 |2001年第6期|p.1098-1109|共12页
作者
Q.-S. Chen; H. Zhang; V. Prasad;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类热力工程、热机;
关键词
Silicon Carbide; Physical vapor Transport; Process Modeling; Heat Transfer;

机译：碳化硅;物理蒸气传输;流程建模;传播热量;

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专利

1. Growth of silicon carbide bulk crystals by physical vapor transport method and modeling efforts in the process optimization [J] . Chen QS, Lu J, Zhang ZB, Journal of Crystal Growth . 2006,第2期

机译：物理气相传输法生长碳化硅块状晶体及其工艺优化中的建模工作
2. Modeling of silicon carbide crystal growth by physical vapor transport method [J] . R.-H. Ma, Q.-S. Chen, H. Zhang, Journal of Crystal Growth . 2000,第1a4期

机译：物理气相传输法模拟碳化硅晶体的生长
3. Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals [J] . Ohtani N, Katsuno M, Tsuge H, Journal of Crystal Growth . 2006,第1期

机译：碳化硅（SiC）单晶物理气相传输生长过程中的位错的传播行为
4. MODELING HEAT TRANSFER DURING SUBLIMATION GROWTH OF SILICON CARBIDE SINGLE CRYSTALS BY PHYSICAL VAPOR TRANSPORT [C] . J. B. Allen, C. F. Comwell, N. J. Lee, International Conference on Advanced Ceramics and Composites;ICACC . 2011

机译：物理气相传输模拟碳化硅单晶在增生过程中的传热
5. Finite element modeling of dislocation multiplication in silicon carbide crystals grown by physical vapor transport. [D] . Chen, Qingde. 2015

机译：物理气相传输生长的碳化硅晶体中位错倍增的有限元建模。
6. The Physical Vapor Transport Method for Bulk AlN Crystal Growth [O] . Wen-Hao Chen, Zuo-Yan Qin, Xu-Yong Tian, 2019

机译：AlN晶体生长的物理气相传输方法
7. Investigation of the Growth Kinetics of SiC Crystals during Physical Vapor Transport Growth by the Application of In Situ 3D Computed Tomography Visualization [O] . Matthias Arzig, Michael Salamon, Norman Uhlmann, 2019

机译：用原位3D计算断层扫描可视化物理蒸汽运输过程中SiC晶体生长动力学研究

Modeling of Heat Transfer and Kinetics of Physical Vapor Transport Growth of Silicon Carbide Crystals

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