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Electronic Spectra of the 1:1 Rhodamine B Base with Ethyl Gallate in Solution and in the Solid State

机译:溶液和固态中没食子酸乙酯与1:1罗丹明B碱的电子光谱

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摘要

The electronic spectra of the 1:1 rhodamine B base (RBB: leuco dye) with ethyl gallate (EG: developer) have been studied in solution and in the solid state (i.e., in spin-coated films and in single crystals) on the basis of the crystal structure analysis. There are two crystalline phases in the 1:1 "RBB/EG" colorant at low (93 K) and room temperatures. In solution, the maximum color intensity occurs with the 1:1 molar ratio of RBB with HCI, giving an absorption band at about 556 nm. In the solid state of spin-coated RBB/EG layers, an absorption band appears around 577 nm due to the ring opening caused by the hydrogen bond formation between RBB and EG. However, the color intensity is found to be limited to about 80% of the maximum available value. This has been attributed to a residual fraction of RBB molecules whose lactone ring is still closed due to steric hindrance. In addition, the polarized reflection spectra measured on single crystals of RBB/EG exhibit a drastically different spectrum (i.e., absorption maximum about 480 nm) from that of spin-coated films of the amorphous state. This result suggests that strong excitonic interactions of the H-aggregate type are operative in single crystals of RBB/EG that significantly displace the absorption band toward shorter wavelengths.
机译:在溶液和固态(即在旋涂膜和单晶中)上,研究了1:1罗丹明B碱(RBB:无色染料)与没食子酸乙酯(EG:显影剂)的电子光谱。晶体结构分析的基础。在低温(93 K)和室温下,1:1“ RBB / EG”着色剂中有两个结晶相。在溶液中,最大的颜色强度出现在RBB与HCl的摩尔比为1:1的情况下,吸收谱带约为556 nm。在旋涂的RBB / EG层的固态下,由于RBB和EG之间形成氢键而引起的开环,吸收带出现在577 nm附近。然而,发现颜色强度被限制为最大可用值的约80%。这归因于RBB分子的残留部分,其内酯环由于空间位阻而仍然闭合。另外,在RBB / EG的单晶上测得的偏振反射光谱与无定形旋涂膜的光谱具有截然不同的光谱(即最大吸收约480nm)。该结果表明,H-聚集体类型的强激子相互作用在RBB / EG的单晶体中起作用,该晶体显着地将吸收带移向较短的波长。

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  • 来源
    《Journal of Imaging Science and Technology》 |2009年第5期|050303.1-050303.7|共7页
  • 作者

    K. Sato; H. Shima; J. Mizuguchi;

  • 作者单位

    Graduate School of Engineering, Yokohama National University, 240-8501 Yokohama, Japan;

    Graduate School of Engineering, Yokohama National University, 240-8501 Yokohama, Japan;

    Graduate School of Engineering, Yokohama National University, 240-8501 Yokohama, Japan;

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