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首页> 外文期刊>Journal of Imaging Science and Technology >Top Contact Organic Thin Film Transistors with Ink Jet Printed Metal Electrodes
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Top Contact Organic Thin Film Transistors with Ink Jet Printed Metal Electrodes

机译：带有喷墨印刷金属电极的顶部接触有机薄膜晶体管

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摘要

Ink jet printing conductive metal nanopastes have been studied in research on printed circuit boards and passive components. This technique provides a manufacturing method that can replace more expensive processes, such as lithography or metal evaporation. In this paper, we demonstrated a printed silver top-contact source-drain electrodes on bottom-gate organic thin film transistors (OTFTs). The soluble conjugated polymer, regioregular poly(3-hexylthiophene) (RR-P3HT), was used as the active channel material. To increase electric transport efficiency by tuning the surface hydrophibic characteristics, a buffer layer, V_2O_5, between organic semiconductor and printed electrodes, was introduced to resolve the incompatibility of these two layers. The results indicated the printed Ag on V_2O_5 film is hydrophilic (contact angle ～10°), different with that on P3HT only (hydrophibic, contact angle about 65°). High hydrophilic surface of V_2O_5 led to self-aligning behavior of patterned Ag nanopastes and is helpful to get a flat film. This study also compares the characteristics of OTFTs to traditionally evaporated electrodes and to ink jet printed source-drain electrodes, in order to analyze the mechanism action of the buffer layer and its related process differences
机译：在印刷电路板和无源元件的研究中已经研究了喷墨印刷导电金属纳米糊剂。该技术提供了可以代替更昂贵的工艺（例如光刻或金属蒸发）的制造方法。在本文中，我们展示了在底栅有机薄膜晶体管（OTFT）上印刷的银顶接触源漏电极。可溶性共轭聚合物，区域规则的聚（3-己基噻吩）（RR-P3HT），用作活性通道材料。为了通过调节表面疏水性来提高电传输效率，在有机半导体和印刷电极之间引入了缓冲层V_2O_5，以解决这两层的不相容性。结果表明，在V_2O_5膜上印刷的Ag具有亲水性（接触角约为10°），与仅在P3HT上的亲水性（疏水，接触角约为65°）不同。 V_2O_5的高亲水性表面导致图案化的Ag纳米浆料的自对准行为，有助于获得平坦的薄膜。这项研究还比较了OTFT与传统蒸发电极以及喷墨印刷的源漏电极的特性，以分析缓冲层的机理作用及其相关工艺差异

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