Electrical Characterization of Semi-insulating Devices for Electrophotography

Inan Chen; Ming-Kai Tse

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Electrical Characterization of Semi-insulating Devices for Electrophotography

机译：电子照相用半绝缘装置的电气特性

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It has been shown that in semi-insulating films, the characterization of charge transport phenomena, such as dielectric relax- ation, by resistance and capacitance only is insufficient. The independent roles played by additional transport parameters, including charge injection, trapping and field dependent mobility, are elucidated by a first principle treatment of charge trans- ports in both the closed circuit and open circuit modes.

机译：已经表明，在半绝缘膜中，仅通过电阻和电容来表征诸如电介质弛豫之类的电荷传输现象是不够的。在闭路和开路模式下，电荷传输的第一个原理处理都阐明了其他传输参数所起的独立作用，包括电荷注入，俘获和与场有关的迁移率。

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《Journal of Imaging Science and Technology》 |2000年第5期|p.462-465|共4页
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Inan Chen; Ming-Kai Tse;
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1. Electrical characterization of semi-insulating devices for electrophotography [J] . Chen I., Tse MK. Journal of Imaging Science . 2000,第5期

机译：电子照相用半绝缘装置的电气特性
2. A comparative study of Mg and Pt contacts on semi-insulating GaAs: Electrical and XPS characterization [J] . Dubecky F., Kindl D., Hubik P., Applied Surface Science . 2017,第Feba15期

机译：半绝缘GaAs上Mg和Pt接触的比较研究：电学和XPS表征
3. Homoepitaxial growth and electrical characterization of iron-doped semi-insulating 4H-SiC epilayer [J] . Ho Keun Song, Sun Young Kwon, Han Seok Seo, Applied Physics Letters . 2006,第15期

机译：掺铁半绝缘4H-SiC外延层的同质外延生长和电学表征
4. Electrical Characterization of Semi-insulating Devices for Electrophotography [C] . Inan Chen, Ming-Kai Tse International conference on digital printing technologies of the society for imaging science and technology . 1999

机译：电子照相半绝缘装置的电气表征
5. High growth rate and high purity semi-insulating epitaxy using dichlorosilane for power devices. [D] . Chowdhury, Iftekhar. 2010

机译：使用二氯硅烷的高生长速率和高纯度半绝缘外延，用于功率器件。
6. Contactless In Situ Electrical Characterization Method of Printed Electronic Devices with Terahertz Spectroscopy [O] . Mariia Zhuldybina, Xavier Ropagnol, Charles Trudeau, 2019

机译：太赫兹光谱技术的印刷电子设备非接触原位电表征方法
7. Publisher’s Note: “Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices” J. Appl. Phys 127, 215703 (2020) [O] . Habib Ahmad, Travis J. Anderson, James C. Gallagher, 2020

机译：出版商注：“铍掺杂半绝缘GaN，没有表面累积为主页高功率器件”J。苹果。 Phys 127,215703（2020）
8. Electrical Characterization of Semi-Insulating Metalorganic Vapor Phase EpitaxyGaAs Grown by Controlled Oxygen Incorporation [R] . Huang, J. W., Kuech, T. F. 1994

机译：控制氧合成半绝缘金属有机气相外延Gaas的电学表征

Electrical Characterization of Semi-insulating Devices for Electrophotography

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