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首页> 外文期刊>Journal of Lightwave Technology >An Optical Interconnect Transceiver at 1550 nm Using Low-Voltage Electroabsorption Modulators Directly Integrated to CMOS
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An Optical Interconnect Transceiver at 1550 nm Using Low-Voltage Electroabsorption Modulators Directly Integrated to CMOS

机译：使用直接集成到CMOS的低压电吸收调制器在1550 nm处建立光互连收发器

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摘要

A low-voltage, 90-nm CMOS optical interconnect transceiver operating at 1550-nm optical wavelength is presented. This is the first demonstration of a novel optoelectronic modulator architecture (the quasi-waveguide angled-facet electroabsorption modulator) in a system. It features a simple electronic packaging via flip-chip bonding to silicon. Devices have a broad optical bandwidth, are arrayed two dimensionally, and feature surface normal, spatially separated, and misalignment-tolerant optical ports. The modulators are driven with a novel pulsed-cascode driver capable of supplying an output-voltage swing of 2 V (twice the nominal 1-V CMOS supply) without overstressing thin-oxide core CMOS devices. At the receiver side, a sensitivity of $-$15.2 dBm is obtained with an integrating/double-sampling front end. The transceiver includes clock generation and recovery circuitry that enables a data serialization factor of five. At a maximum data rate of 1.8 Gb/s, the optical transmitter, receiver, and clocking circuitry consume 12.6, 4.5, and 6.5 mW, respectively, for a total link electrical power dissipation of 23.6 mW. To the best of our knowledge, this is the first demonstration of an interconnect transceiver operating at 1550 nm with a III–V output device directly integrated to the CMOS.
机译：提出了一种在1550 nm光波长下工作的低压90 nm CMOS光互连收发器。这是系统中新型光电调制器架构（准波导角小平面电吸收调制器）的首次演示。它具有通过倒装芯片键合到硅的简单电子封装。设备具有较宽的光带宽，二维排列，并具有表面法线，空间分隔和不对齐误差的光端口。调制器由新型脉冲共源共栅驱动器驱动，能够提供2V的输出电压摆幅（两倍于1-V CMOS额定电源），而不会给薄氧化物内核CMOS器件造成过大的应力。在接收器端，使用积分/双采样前端可获得$-$ 15.2 dBm的灵敏度。收发器包括时钟生成和恢复电路，该电路使数据串行化因子为5。在最大数据速率为1.8 Gb / s的情况下，光发送器，接收器和时钟电路分别消耗12.6、4.5和6.5 mW，总链路功耗为23.6 mW。据我们所知，这是互连收发器的首次演示，该收发器工作在1550 nm处，并且III-V输出设备直接集成到CMOS中。

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