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首页> 外文期刊>Journal of magnetism and magnetic materials >Large lattice mismatch effects on the epitaxial growth and magnetic properties of FePt films
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Large lattice mismatch effects on the epitaxial growth and magnetic properties of FePt films

机译：晶格失配对FePt薄膜的外延生长和磁性能的影响

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摘要

Heteroepitaxial film growth is crucial for magnetic and electronic devices. In this work, we reported the effects of the large lattice mismatch and film thickness on the epitaxial growth and magnetic properties of FePt films on Zr_xTi_(1_x)N (0 01) intermediate layer. FePt films with different thickness were deposited on ZrTiN intermediate layers with various doping concentration of TiN in ZrN. The increase in doping concentration of TiN caused a decrease in the lattice parameters of ZrTiN intermediate layer. It was found that (001) epitaxy of FePt 10 nm films was only achieved on ZrTiN intermediate layer when the TiN composition was ≥25 vol%, while (001) texture of 5 nm films was achieved on ZrTiN intermediate layer with a minimum of 50 vol% TiN composition. The in-plane lattice constants of FePt and Zr_(0.70)Ti_(0.30)N (25 vol% TiN) were 3.870 Å and 4.476 Å, respectively, which resulted in a lattice mismatch as large as 15.7%. These large lattice mismatch heterostructures adopted 7/6 domain matching epitaxy. The magneto-crystalline anisotropy of FePt films was improved with the increase in lattice mismatch. Intrinsic magnetic properties were extrapolated for FePt (30 nm)/Zr_(0.70)Ti_(0.30)N (30 nm)/TaN (30 nm)/MgO, and the M_5(0K) and K_1(0K) were 1042 emu/cc and 5.10 × 10~7 erg/cc, respectively, which is comparable to that of bulk L1_0 FePt.
机译：异质外延膜的生长对于磁性和电子设备至关重要。在这项工作中，我们报道了较大的晶格失配和膜厚度对Zr_xTi_（1_x）N（0 01）中间层上FePt膜的外延生长和磁性的影响。将具有不同厚度的FePt薄膜沉积在ZrN中间层上，其中TiN的掺杂浓度不同。 TiN掺杂浓度的增加导致ZrTiN中间层的晶格参数降低。发现当TiN组成≥25vol％时，仅在ZrTiN中间层上获得（001）FePt 10 nm膜的外延，而在ZrTiN中间层上获得（001）5nm膜的织构最少为50 TiN的体积百分比FePt和Zr_（0.70）Ti_（0.30）N（25 vol％TiN）的面内晶格常数分别为3.870Å和4.476Å，导致晶格失配高达15.7％。这些大的晶格失配异质结构采用了7/6域匹配外延。 FePt薄膜的磁晶各向异性随晶格失配的增加而改善。 FePt（30 nm）/ Zr_（0.70）Ti_（0.30）N（30 nm）/ TaN（30 nm）/ MgO的内在磁性进行了推断，M_5（0K）和K_1（0K）为1042 emu / cc和5.10×10〜7 erg / cc，分别与散装L1_0 FePt相当。

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  • 来源
    《Journal of magnetism and magnetic materials》 |2018年第1期|125-134|共10页
  • 作者

    Jinyu Deng; Kaifeng Dong; Ping Yang; Yingguo Peng; Ganping Ju; Jiangfeng Hu; Gan Moog Chow; Jingsheng Chen;

  • 作者单位

    Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore;

    School of Automation, China University of Geoscience, Wuhan 430074, China;

    Singapore Synchrotron Light Source, National University of Singapore, Singapore 117603, Singapore;

    Seagate Technology, Fremont, CA 94538, USA;

    Seagate Technology, Fremont, CA 94538, USA;

    Data Storage Institute (DSI), Singapore 117608, Singapore;

    Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore;

    Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore;

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