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首页> 外文期刊>Journal of Manufacturing Processes >Experimental investigation on the ultrasonically assisted single-sided lapping of monocrystalline SiC substrate
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Experimental investigation on the ultrasonically assisted single-sided lapping of monocrystalline SiC substrate

机译：单晶SiC衬底超声辅助单面研磨的实验研究

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This paper studied the effect and optimization of ultrasonically assisted single-sided lapping for monocrystalline SiC wafer using grey relational analysis method. 27 experiments based on the Taguchi method of orthogonal arrays were performed to determine the best factor level condition. Besides, the comparative experiments using three lapping plates (cast iron, copper, and aluminum) were also performed under ultrasonic lapping and non-ultrasonic lapping, respectively. Material removal rate (MRR) and surface roughness (Ra, Rmax) were selected as the output indexes. The degree of influence that the controllable process factors exert on the indexes was studied by investigating the correlation between them. By analyzing the signal-to-noise ratio and grey relational grade, the most influential process factor is the interaction item of normal pressure and rotating speed. Ultrasonically assisted vibration has a positive correlation with the MRR, while simultaneously increases the surface roughness, but the higher ultrasonic power is beneficial to inhibit the increase of surface roughness. The lower hardness of lapping plate can obtain the better surface at the cost of decreasing MRR, but much too low hardness may destroy the machined surface.
机译：采用灰色关联分析法研究了单晶SiC晶片超声辅助单面研磨的效果和优化。基于Taguchi正交阵列方法进行了27个实验，以确定最佳因子水平条件。此外，还分别在超声研磨和非超声研磨下使用三个研磨板（铸铁，铜和铝）进行了对比实验。选择材料去除率（MRR）和表面粗糙度（Ra，Rmax）作为输出指标。通过研究可控过程因素对指标的影响程度，研究了可控过程因素对指标的影响程度。通过分析信噪比和灰色关联度，影响最大的工艺因素是常压与转速的相互作用项。超声辅助振动与MRR正相关，同时会增加表面粗糙度，但是较高的超声功率有利于抑制表面粗糙度的增加。研磨板的较低硬度可以以降低MRR为代价获得更好的表面，但是太低的硬度可能会破坏机加工表面。

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