Fabrication of TiSi2</sub> using microwave hydrogen plasma annealing

Tao Wang; Hi-Deok Lee; Y. B. Dai

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Fabrication of TiSi2 using microwave hydrogen plasma annealing

机译：微波氢等离子体退火制备TiSi2

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摘要

A new method, microwave hydrogen plasma annealing of sputter-deposited titanium films on an Si (111) substrate, was used to fabricate TiSi2 films. The films were characterized by x-ray diffraction, Auger electron spectroscopy, sputter depth profiling, and four-point probe resistivity measurements. Polycrystalline TiSi2, dominated by components with (040) orientation, was grown at the annealing temperature of 800 °C. The microwave hydrogen plasma was considered not only to provide the heat for the solid-phase reaction, but also to promote the solid-phase reaction by enhancing atom mobility and diffusion.

机译：一种新的方法，在Si（111）衬底上溅射沉积的钛膜的微波氢等离子体退火，被用于制造TiSi2 膜。薄膜通过X射线衍射，俄歇电子能谱，溅射深度分析和四点探针电阻率测量来表征。以（040）取向的组分为主的多晶TiSi2 在800°C的退火温度下生长。认为微波氢等离子体不仅为固相反应提供热量，而且还通过增强原子迁移率和扩散来促进固相反应。

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来源
《Journal of Materials Engineering and Performance》 |2005年第4期|516-518|共3页
作者
Tao Wang; Hi-Deok Lee; Y. B. Dai;
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作者单位

Microelectronic Device ampamp System Laboratory Department of Electronics Engineering Chungnam National University Gung-Dong Yusong-Gu 305-764 Daejeon Korea;

Microelectronic Device ampamp System Laboratory Department of Electronics Engineering Chungnam National University Gung-Dong Yusong-Gu 305-764 Daejeon Korea;

School of Materials Science and Engineering ShangHai Jiao Tong University 1954 Huashan Street 200030 Peoples Republic of China;

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正文语种 eng
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microwave hydrogen plasma annealing; silicide; titanium;

机译：微波氢等离子体退火;硅化物;钛;

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专利

1. Fabrication of TiSi_2 Using Microwave Hydrogen Plasma Annealing [J] . Tao Wang, Y.B. Dai, Hi-Deok Lee Journal of Materials Engineering and Performance . 2005,第4期

机译：微波氢等离子体退火制备TiSi_2
2. Robust Fabrication of Quantum Dots on Few-Layer MoS2 by Soft Hydrogen Plasma and Post-Annealing [J] . Cai Di, Xiao Shaoqing, Nan Haiyan, Particle & Particle Systems Characterization: Measurement and Description of Particle Properties and Behavior in Powders and Other Disperse Systems . 2018,第6期

机译：通过软氢等离子体和退火较少层MOS2在几层MOS2上的鲁棒制造
3. Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing [J] . Zhu, Qiaozhi, Qin, Applied Physics Letters . 2013,第6期

机译：电子回旋共振微波氮氢混合等离子体后氧化退火改善SiO2 / 4H-SiC界面性能
4. Characteristics of ion-plasma coatings AlN-TiB2(TiSi2) after annealing [C] . Demianenko A.A., Sobol O.V., Erdybaeva N.K. International Crimean Conference Microwave Telecommunication Technology . 2014

机译：退火后离子等离子体涂层AlN-TiB2（TiSi2）的特性
5. Part I. Destruction of environmental pollutants by microwave heating and discharge plasmas. Part II. Generation of hydrogen from water and methane using discharge plasmas. [D] . Spiess, Franz-Josef. 2003

机译：第一部分：微波加热和放电等离子体对环境污染物的破坏。第二部分使用放电等离子体从水和甲烷中产生氢。
6. Fabrication of graphene-based electrode in less than a minute through hybrid microwave annealing [O] . Duck Hyun Youn, Ji-Wook Jang, Jae Young Kim, -1

机译：通过混合微波退火在不到一分钟的时间内制造石墨烯基电极
7. High Temperature Annealing of Ion-Plasma Nanostructured Coatings Based on AlN-TiB2(TiSi2) [O] . Погребняк Олександр Дмитрович, Погребняк Александр Дмитриевич, Pohrebniak Oleksandr Dmytrovych, 2014

机译：基于AlN-TiB2（TiSi2）的离子-等离子体纳米结构涂层的高温退火

Fabrication of TiSi2 using microwave hydrogen plasma annealing

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