...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Materials Research >Effect of cooling rate on growth and transformation of primary Mg_2Si in Al-Mg_2Si in situ composites
【24h】

Effect of cooling rate on growth and transformation of primary Mg_2Si in Al-Mg_2Si in situ composites

机译：冷却速度对Al-Mg_2Si原位复合材料中初生Mg_2Si生长和转变的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this paper, the morphology transition and the growth process of the primary Mg2Si in the Al-Mg2Si in situ composites were three-dimensionally investigated by observing the extracted Mg2Si particles. The primary Mg2Si transforms from perfect octahedron to truncated octahedron with increasing cooling rate. Combining with the crystal morphologies obtained at different growth stages, the growth mechanism of octahedral Mg2Si was discussed. In the early growth stage of the octahedral Mg2Si, the secondary branches preferentially grow on the advancing tips of the first branches. Then, the hollows in the {111} faces shrink gradually and the octahedral Mg2Si forms finally. With the increase of Mg2Si content, dendritic Mg2Si phases were observed and the truncated octahedron Mg2Si connect mutually to form the complicated morphology at low cooling rate. The high cooling rate transforms the morphology of the Mg2Si crystal. The growth rates of the 100 and 111 axes can be manipulated by adjusting the cooling rates, which are responsible for the evolution of the Mg2Si crystals.
机译：本文通过观察提取的Mg2Si颗粒，三维研究了Al-Mg2Si原位复合材料中初生Mg2Si的形貌转变和生长过程。随着冷却速率的提高，主要的Mg2Si从完美的八面体转变为截断的八面体。结合在不同生长阶段获得的晶体形态，讨论了八面体Mg2Si的生长机理。在八面体Mg2Si的早期生长阶段，次要分支优先在第一个分支的前进尖端生长。然后，{111}面的空洞逐渐缩小，最终形成八面体Mg2Si。随着Mg2Si含量的增加，观察到树枝状Mg2Si相，而截断的八面体Mg2Si在低冷却速率下相互连接形成复杂的形貌。高冷却速率改变了Mg2Si晶体的形貌。 <100>和<111>轴的生长速率可以通过调节冷却速率来控制，这是导致Mg2Si晶体析出的原因。

著录项

  • 来源
    《Journal of Materials Research》 |2018年第20期|3458-3465|共8页
  • 作者

    Wang Dongtao; Zhang Haitao; Guo Cheng; Wu Hailin; Cui Jianzhong;

  • 作者单位

    Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang 110004, Liaoning, Peoples R China;

    Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang 110004, Liaoning, Peoples R China;

    Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang 110004, Liaoning, Peoples R China;

    Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang 110004, Liaoning, Peoples R China;

    Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang 110004, Liaoning, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号