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首页> 外文期刊>Journal of Materials Research >Electrode-induced lattice distortions in GaAs multi-quantum-dot arrays
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Electrode-induced lattice distortions in GaAs multi-quantum-dot arrays

机译：电极引起的GaAs多量子点阵列中的晶格畸变

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摘要

Increasing the number of quantum bits while preserving precise control of their quantum electronic properties is a significant challenge in materials design for the development of semiconductor quantum computing devices. Semiconductor heterostructures can host multiple quantum dots that are electrostatically defined by voltages applied to an array of metallic nanoelectrodes. The structural distortion of multiple-quantum-dot devices due to elastic stress associated with the electrodes has been difficult to predict because of the large micrometer-scale overall sizes of the devices, the complex spatial arrangement of the electrodes, and the sensitive dependence of the magnitude and spatial variation of the stress on processing conditions. Synchrotron X-ray nanobeam Bragg diffraction studies of a GaAs/AlGaAs heterostructure reveal the magnitude and nanoscale variation of these distortions. Investigations of individual linear electrodes reveal lattice tilts consistent with a 28-MPa compressive residual stress in the electrodes. The angular magnitude of the tilts varies by up to 20% over distances of less than 200 nm along the length of the electrodes, consistent with heterogeneity in the metal residual stress. A similar variation of the crystal tilt is observed in multiple-quantumdot devices, due to a combination of the variation of the stress and the complex electrode arrangement. The heterogeneity in particular can lead to significant challenges in the scaling of multiple-quantum-dot devices due to differences between the charging energies of dots and uncertainty in the potential energy landscape. Alternatively, if incorporated in design, stress presents a new degree of freedom in device fabrication.
机译：增加量子比特的数量，同时保持对它们的量子电子特性的精确控制，这是用于开发半导体量子计算装置的材料设计中的重大挑战。半导体异质结构可以托管通过施加到金属纳米电极阵列的电压静电限定的多个量子点。由于与电极的弹性应力相关联的多量子点装置的结构失真由于装置的大计级整体尺寸，电极的复杂空间布置以及电极的复杂空间布置以及敏感的依赖性而难以预测压力在加工条件下应力的幅度和空间变化。 GaAs / Algaas异质结构的同步rotron X射线纳米Bragg衍射研究揭示了这些扭曲的幅度和纳米级变化。各个线性电极的调查显示了与电极中的28MPa压缩残余应力一致的晶格倾斜。倾斜的角度幅度在沿电极的长度小于200nm的距离在小于200nm的距离上变化了20％，这与金属残余应力中的异质性一致。由于应力的变化和复电极布置的组合，在多量子斑点装置中观察到晶体倾斜的类似变型。特别是由于潜在能量景观中的圆点的充电能量和不确定度之间的差异，异质性可能导致多量子点装置的缩放中的显着挑战。或者，如果在设计中结合，则应应应力在设备制造中具有新的自由度。

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  • 来源
    《Journal of Materials Research》 |2019年第8期|1291-1301|共11页
  • 作者

    Pateras Anastasios; Carnis Jerome; Mukhopadhyay Uditendu; Richard Marie-Ingrid; Leake Steven J.; Schulli Tobias U.; Reichl Christian; Wegscheider Werner; Dehollain Juan Pablo; Vandersypen Lieven M. K.; Evans Paul G.;

  • 作者单位

    Univ Wisconsin Dept Mat Sci & Engn Madison WI 53706 USA;

    Aix Marseille Univ Univ Toulon CNRS IM2NPUMR 7334 F-13397 Marseille France|ID01 ESRF F-38043 Grenoble France;

    Delft Univ Technol QuTech NL-2600 GA Delft Netherlands|Delft Univ Technol Kavli Inst NanaSci NL-2600 GA Delft Netherlands;

    Aix Marseille Univ Univ Toulon CNRS IM2NPUMR 7334 F-13397 Marseille France|ID01 ESRF F-38043 Grenoble France;

    ID01 ESRF F-38043 Grenoble France;

    ID01 ESRF F-38043 Grenoble France;

    Swiss Fed Inst Technol Lab Solid State Phys CH-8093 Zurich Switzerland;

    Swiss Fed Inst Technol Lab Solid State Phys CH-8093 Zurich Switzerland;

    Delft Univ Technol QuTech NL-2600 GA Delft Netherlands|Delft Univ Technol Kavli Inst NanaSci NL-2600 GA Delft Netherlands;

    Delft Univ Technol QuTech NL-2600 GA Delft Netherlands|Delft Univ Technol Kavli Inst NanaSci NL-2600 GA Delft Netherlands;

    Univ Wisconsin Dept Mat Sci & Engn Madison WI 53706 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    X-ray diffraction (XRD); nanostructure; devices;

    机译：X射线衍射（XRD）;纳米结构;器件;

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