机译:基板偏置电压对DC磁控溅射Ni-Zr合金薄膜结构和性能的影响
Department of Metallurgical and Materials Engineering Indian Institute of Technology Kharagpur Kharagpur West Bengal 721302 India;
Department of Metallurgical and Materials Engineering Indian Institute of Technology Kharagpur Kharagpur West Bengal 721302 India;
Department of Metallurgical and Materials Engineering Indian Institute of Technology Kharagpur Kharagpur West Bengal 721302 India;
机译:直流磁控溅射衬底偏压对TiO_2薄膜结构,电和介电性能的影响
机译:基板偏压对反应磁控溅射沉积沉积的ZrO2薄膜结构,机械和腐蚀性能的影响
机译:衬底偏压对直流磁控溅射Ta_2O_5薄膜的结构,电学和光学性能的影响
机译:基板偏置电压对双阴极DC不平衡磁控溅射制备的金红石TiO_2薄膜结构的影响
机译:通过反应磁控溅射沉积的亚稳态钛(0.5)铝(0.5)铝合金薄膜的物理性能。
机译:直流磁控溅射过程中衬底偏置对VO2薄膜质量及其绝缘体-金属过渡行为的影响
机译:基板DC偏置电压对镍薄膜结构性能的依赖性,具有磁控溅射,具有电感耦合等离子体辅助的多极磁等离子体限制