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Influence of substrate bias voltage on structure and properties of DC magnetron sputtered Ni-Zr alloy thin films

机译:基板偏置电压对DC磁控溅射Ni-Zr合金薄膜结构和性能的影响

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摘要

The role of negative substrate bias voltage in influencing the microstructural evolution, along with the mechanical and scratch behavior of magnetron sputtered Ni-Zr alloyed thin films, has been investigated. The films have been deposited on a Si(100) substrate by direct current (DC) magnetron co-sputtering of high-purity elemental Ni and Zr targets, using an optimized target power in an argon atmosphere at room temperature by altering the negative substrate bias voltage (0 to -80 V). The increase in negative substrate bias voltages leads to an increase in Zr content of the investigated films. The characterization techniques such as grazing incidence X-ray diffraction and high-resolution transmission electron microscopy studies confirm that an increase in the negative substrate bias voltage leads to an increase in the volume fractions of amorphous phase and Ni_3Zr, but a decrease in the deposition rate, surface roughness, and average grain sizes. Hardness and Young's modulus obtained by nanoindentation, along with the coefficient of friction obtained from nano-scratch experiments, appear to be related to the relative volume fractions of both nanocrystalline and the amorphous phase. Furthermore, increase in Ni3Zr volume fraction with decrease in grain size within the crystalline part of the film, with increase in substrate bias used during deposition may have contributed to both increase in both hardness and scratch resistance.
机译:研究了负基板偏置电压在影响微观结构演化中的作用,以及磁控溅射的Ni-ZR合金薄膜的机械和划痕行为。通过改变负基质偏压,通过高纯度元素Ni和Zr靶的直流(DC)磁控磁控溅射在Si(DC)磁控管副溅射上沉积在Si(100)族基板上沉积在Si(100)型底物上。通过改变负基质偏压,在室温下在室温下在氩气氛中使用优化的目标功率电压(0至-80 V)。负基质偏置电压的增加导致研究的研究膜的Zr含量的增加。诸如放牧入射X射线衍射和高分辨率透射电子显微镜研究的表征技术证实,负基板偏置电压的增加导致非晶相和Ni_3ZR的体积分数的增加,但沉积速率降低,表面粗糙度和平均晶粒尺寸。通过纳米狭窄获得的硬度和杨氏模量以及从纳米划痕实验获得的摩擦系数似乎与纳米晶和非晶相的相对体积分数有关。此外,在膜的晶体部分内的晶粒尺寸的降低增加了Ni3zr体积分数,随着沉积期间使用的基板偏压的增加可能导致硬度和耐刮擦性的增加。

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  • 来源
    《Journal of Materials Research》 |2020年第12期|1543-1555|共13页
  • 作者单位

    Department of Metallurgical and Materials Engineering Indian Institute of Technology Kharagpur Kharagpur West Bengal 721302 India;

    Department of Metallurgical and Materials Engineering Indian Institute of Technology Kharagpur Kharagpur West Bengal 721302 India;

    Department of Metallurgical and Materials Engineering Indian Institute of Technology Kharagpur Kharagpur West Bengal 721302 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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