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Role of oxide at interface between organic layer and silicon substrate in hybrid solar cells

机译:氧化物在杂交太阳能电池中有机层和硅衬底之间的界面的作用

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摘要

Degradation in PEDOT:PSS-silicon hybrid heterojunction solar cells is centered at the organic-silicon interface characterized by an s-shaped JV curve. The effects of interfacial silicon oxide and the degradation of PEDOT:PSS films on solar cell performance were simulated and fit to experimental results and found to be good predictors of JV performance and the development of s-shapes. Transmission line measurement (TLM) studies showed the Ag-PEDOT:PSS interface remains ohmic over 5 weeks and has a contact resistivity < 0.1 ohm cm~2 over 10 days. X-ray photoelectron spectroscopy (XPS) showed that the interfacial silicon oxide develops rapidly after fabrication with high amounts of suboxide defects that grows and chemically saturates to the native oxide thickness (1.5 nm) and composition as the devices age. Hard X-ray photoelectron spectroscopy (HAXPES) was used to investigate the buried organic-silicon interface and showed that doping in the PEDOT:PSS backbone decreases and the PEDOT:PSS-silicon band alignment does not change measurably as the devices age.
机译:降解在PEDOT:PSS-硅混合异质结太阳能电池在有机 - 硅界面,其特征在于s形JV曲线的中心。界面氧化硅的影响及PEDOT的降解:PSS薄膜对太阳能电池性能进行模拟,并适合实验结果,发现JV性能和S形的发展是良好的预测因子。传输线测量(TLM)研究显示AG-PEDOT:PSS界面在5周内保持欧姆,并且接触电阻率<0.1欧姆Cm〜2超过10天。 X射线光电子能谱(XPS)显示,在用大量的氧化物缺陷中制造和化学饱和至天然氧化物厚度(1.5nm)和组合物时,界面氧化硅在制造后迅速发展。硬X射线光电子能谱(HAXPES)用于研究掩埋有机 - 硅界面,并显示在该PEDOT掺杂:PSS骨干降低并且PEDOT:PSS-硅带比对不作为装置年龄可测量变化。

著录项

  • 来源
    《Journal of Materials Research》 |2021年第3期|557-570|共14页
  • 作者单位

    Department of Materials Science and Engineering University of Delaware 201 Dupont Hall Newark DE 19711 USA;

    Department of Electrical and Computer Engineering University of Delaware 140 Evans Hall Newark DE 19711 USA;

    Department of Materials Science and Engineering University of Delaware 201 Dupont Hall Newark DE 19711 USA;

    Department of Materials Science and Engineering University of Delaware 201 Dupont Hall Newark DE 19711 USA Department of Electrical and Computer Engineering University of Delaware 140 Evans Hall Newark DE 19711 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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