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首页> 外文期刊>Journal of Materials Research >Microstructure and electrical properties of CuO-doped K_(0.5)Na_(0.5)NbO_3-based single crystals with low dielectric loss
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Microstructure and electrical properties of CuO-doped K_(0.5)Na_(0.5)NbO_3-based single crystals with low dielectric loss

机译：具有低介电损耗的Cuo掺杂K_（0.5）NA_（0.5）NBO_3的单晶的微观结构和电性能

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摘要

CuO-doped K_(0.5)Na_(0.5)NbO_3 (KNN)-based lead-free piezoelectric single crystals were realized by using a seed-free solid-state crystal growth (SFSSCG) method. The effect of the CuO addition on the single-crystal growth, microstructure and electrical properties of the systems was studied systemically. The addition of CuO is beneficial for the growth of the KNN-based crystals and decreases the width of ferroelectric domains of the crystals. In particular, the CuO doping significantly reduces the dielectric loss of the crystals. The lowest dielectric loss tanδ of 1% was achieved for the CuO-doped crystals with high piezoelectric constant and Curie temperature. The study on the leakage behavior of the crystals shows that the main electrical conduction mechanism is the space-charge-limited-current (SCLC). A coexisting crystalline structure with orthorhombic and tetragonal phases forms in the (1-x)[KNN-LiBiO_3]-xCu_O crystals at x= 0.007-0.009. The growth kinetics and mechanism of the crystals were also investigated.
机译：通过使用无菌固态晶体生长（SFSSCG）方法来实现Cuo掺杂的K_（0.5）Na_（0.5）NO_（0.5）NBO_3（KNN）基础的无铅压电单晶。基本上研究了CUO添加对单晶生长，微观结构和电气性能的影响。 CuO的添加是有益于KNN基晶体的生长，并降低晶体的铁电畴的宽度。特别地，CuO掺杂显着降低了晶体的介电​​损耗。对于具有高压电常数和居里温度的Cuo掺杂的晶体，实现了1％的最低介电损耗Tanδ。对晶体的泄漏行为的研究表明，主电传导机构是空间电荷限制电流（SCLC）。在X = 0.007-0.009的（1-x）α[knn-libio_3] -xcu_o晶体中，具有正交和四边形相的共存结晶结构。还研究了晶体的生长动力学和机制。

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  • 来源
    《Journal of Materials Research》 |2021年第5期|1182-1194|共13页
  • 作者

    Xiaoyu Yao; Minhong Jiang; Shengnan Han; Dedong Li; Yaping Xu; Lin Li; Guanghui Rao;

  • 作者单位

    School of Materials Science and Engineering Guangxi Key Laboratory of Information Materials Guilin University of Electronic Technology Guilin 541004 Guangxi China;

    School of Materials Science and Engineering Guangxi Key Laboratory of Information Materials Guilin University of Electronic Technology Guilin 541004 Guangxi China;

    School of Materials Science and Engineering Guangxi Key Laboratory of Information Materials Guilin University of Electronic Technology Guilin 541004 Guangxi China;

    School of Materials Science and Engineering Guangxi Key Laboratory of Information Materials Guilin University of Electronic Technology Guilin 541004 Guangxi China;

    School of Materials Science and Engineering Guangxi Key Laboratory of Information Materials Guilin University of Electronic Technology Guilin 541004 Guangxi China;

    School of Materials Science and Engineering Guangxi Key Laboratory of Information Materials Guilin University of Electronic Technology Guilin 541004 Guangxi China;

    School of Materials Science and Engineering Guangxi Key Laboratory of Information Materials Guilin University of Electronic Technology Guilin 541004 Guangxi China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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