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Diffusion process in BaSi_2 film formation by thermal evaporation and its relation to electrical properties

机译:BaSi_2热蒸发形成薄膜的扩散过程及其与电性能的关系

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摘要

For fabricating photovoltaic BaSi2 films with controlled carrier density and suppressed oxidation by thermal evaporation, the mechanism determining the film composition from incongruently evaporated BaSi2 must be elucidated. We investigated the effects of source premelting, substrate temperature, and thickness on the structural and electrical properties of evaporated BaSi2 films. It is found by room-temperature deposition that the vapor composition continuously changes from being Ba-rich to being Si-rich. Source premelting suppresses the deposition of Ba-rich vapor. Deposition at 600-700 degrees C shows that BaSi2 forms through the mutual diffusion of Ba and Si, followed by surface oxidation by residual gas. Surface oxidation can be suppressed by alpha-axis-oriented growth. By changing the film thickness, the optimum thickness to obtain homogeneous films with suppressed oxidation is revealed. Sufficient diffusion leads to high film resistivities and low electron densities, which demonstrates a close relationship between the film composition and the electrical properties.
机译:为了制造具有受控载流子密度并通过热蒸发抑制氧化的光伏BaSi2膜,必须阐明由不完全蒸发的BaSi2确定膜组成的机理。我们研究了源预熔化,衬底温度和厚度对蒸发的BaSi2薄膜的结构和电性能的影响。通过室温沉积发现,蒸气组成从富Ba连续变为富Si。源预熔化可抑制富Ba蒸气的沉积。在600-700摄氏度的温度下沉积表明,BaSi2是通过Ba和Si的相互扩散形成的,然后被残留气体进行表面氧化。通过α轴定向生长可以抑制表面氧化。通过改变膜厚,揭示了获得具有抑制的氧化的均质膜的最佳厚度。充分的扩散导致高的膜电阻率和低的电子密度,这证明了膜组成和电性能之间的密切关系。

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  • 来源
    《Journal of Materials Research》 |2018年第16期|2297-2305|共9页
  • 作者单位

    Univ Yamanashi, Ctr Crystal Sci & Technol, Kofu, Yamanashi 4008511, Japan;

    Univ Yamanashi, Ctr Crystal Sci & Technol, Kofu, Yamanashi 4008511, Japan;

    Univ Yamanashi, Ctr Instrumental Anal, Kofu, Yamanashi 4008510, Japan;

    Univ Yamanashi, Ctr Crystal Sci & Technol, Kofu, Yamanashi 4008511, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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