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Ce~(3+)-enriched core—shell ceria nanoparticles for silicate adsorption

机译:富含Ce〜(3+)的核壳二氧化铈纳米粒子吸附硅酸盐

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摘要

Ce~(3+) ions in ceria nanoparticles (NPs) play a role as reactive sites in the adsorption of silicate anions. However, the limited concentration of Ce~(3+) ions in ceria NPs remains a major challenge in this regard. Herein, we report a simple strategy to synthesize Ce~(3+)-enriched core-shell ceria NPs for enhanced adsorption of silicate anions. To increase the overall Ce~(3+) concentration, a shell layer is composed of Ce~(3+)-rich ultrasmall ceria NPs approximately 5 nm in size. The Ce~(3+) concentration of such core-shell ceria NPs is increased by 12.7-17.1% relative to that of the pristine ceria NPs, resulting in increased adsorption of silicate anions. The Freundlich model fits the observed adsorption isotherm well and the constants of adsorption capacity (KP) and adsorption intensity (1) indicate higher adsorption affinity of the core-shell ceria NPs for silicate anions. We attribute these improvements to the increased Ce~(3+) concentration contributed by the ultrasmall ceria coating. This strategy can be used for enhancing the reactivity of ceria materials.
机译:二氧化铈纳米颗粒(NPs)中的Ce〜(3+)离子作为吸附硅酸盐阴离子的反应位。然而,在这方面,Ce〜(3+)离子在二氧化铈NP中的浓度有限仍然是一个重大挑战。在这里,我们报告了一种简单的策略来合成富含Ce〜(3+)的核-壳二氧化铈NP,以增强硅酸盐阴离子的吸附。为了增加Ce_(3+)的总体浓度,壳层由大小约为5 nm的富含Ce〜(3+)的超小二氧化铈NP组成。相对于原始二氧化铈NPs,这种核-壳二氧化铈NPs的Ce〜(3+)浓度增加了12.7-17.1%,导致硅酸盐阴离子的吸附增加。 Freundlich模型很好地拟合了观察到的吸附等温线,并且吸附容量(KP)和吸附强度(1 / n)的常数表明核壳二氧化铈NPs对硅酸根阴离子的吸附亲和力更高。我们将这些改进归因于超细二氧化铈涂层增加的Ce〜(3+)浓度。该策略可用于增强二氧化铈材料的反应性。

著录项

  • 来源
    《Journal of Materials Research》 |2017年第14期|2829-2836|共8页
  • 作者单位

    Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, South Korea;

    Department of Energy Engineering, Hanyang University, Seoul 04763, South Korea;

    Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, South Korea;

    Department of Energy Engineering, Hanyang University, Seoul 04763, South Korea,and Clean/CMP Technology Team, Memory, Samsung Electronics, Gyeonggi-Do 16677, South Korea;

    Department of Energy Engineering, Hanyang University, Seoul 04763, South Korea;

    Department of Chemistry, Myongji University, Yongin 18448, South Korea;

    Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, South Korea,and Department of Energy Engineering, Hanyang University, Seoul 04763, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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