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Densification of ZrB~2-SiC nanocomposites prepared using ZrSi~2, B~(4C), and C additives

机译:使用ZrSi〜2,B〜(4C)和C添加剂制备的ZrB〜2-SiC纳米复合材料的致密化

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摘要

Dense ZrB2-SiC nanocomposites were fabricated at 1450 °C by the high-energy ball milling (HEBM) of ZrB2 powder with ZrSi2-B4C-C additives and reactive spark plasma sintering (R-SPS). The sizes of ZrB2 and SiC grains were 80-350 nm, and the phases were homogeneously distributed because of the molecular-level homogeneity of the constituents in ZrSi2 and the homogeneous mixing of the raw powders by HEBM. The deformation of ZrSi2 or the reactions between the additives during R-SPS did not strongly promote the densification. Fine and homogeneously distributed ZrB2 and SiC particles formed by HEBM and R-SPS were the major reasons for the low temperature densification. The fine particles which had high surface energy provided the driving force for densification at low temperatures. Also, the fine SiC grains suppressed the growth of ZrB2 grains during densification. The 4-point bending strength of the composites sintered at 1500 °C was 354 MPa.
机译:通过ZrB2粉末与ZrSi2-B4C-C添加剂的高能球磨(HEBM)和反应性火花等离子体烧结(R-SPS),在1450°C下制备致密的ZrB2-SiC纳米复合材料。 ZrB2和SiC晶粒的尺寸在80-350 nm之间,并且由于ZrSi2中成分的分子水平均一性以及HEBM对原始粉末的均匀混合,使得相均匀分布。 ZrSi2的形变或R-SPS期间添加剂之间的反应并没有强烈促进致密化。由HEBM和R-SPS形成的细且均匀分布的ZrB2和SiC颗粒是低温致密化的主要原因。具有高表面能的细颗粒提供了在低温下致密化的驱动力。同样,细小的SiC晶粒抑制了致密化过程中ZrB2晶粒的生长。在1500℃下烧结的复合材料的4点弯曲强度为354MPa。

著录项

  • 来源
    《Journal of Materials Research》 |2017年第17期|3302-3308|共7页
  • 作者单位

    Engineering Ceramics Research Group, Korea Institute of Materials Science (KIMS), Changwon, Gyeongnam, South Korea;

    Engineering Ceramics Research Group, Korea Institute of Materials Science (KIMS), Changwon, Gyeongnam, South Korea;

    Engineering Ceramics Research Group, Korea Institute of Materials Science (KIMS), Changwon, Gyeongnam, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ceramic; nanostructure; sintering;

    机译:陶瓷纳米结构烧结;

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