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Photodetectors based on sensitized two-dimensional transition metal dichalcogenides-A review

机译：基于敏化的二维过渡金属二卤化二砷的光电探测器-A评论

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摘要

Atomically thin transition metal dichalcogenides (TMDCs), such as WS_2 and MoS_2, have opened up new opportunities for the next generation of optoelectronics owing to their unique properties such as optical transparency, high carrier mobility, widely tunable band gap, and strong light-matter interaction. The photodetection performance relies primarily on the light absorption efficiency and separation efficiency of photoexcited electron-holes. The photodetectors with all broadband response, high photoconductive gain, high response speed, and high detectivity is arduous challenge to realize using one photo-active material. Building of photodetectors composed of two or more light absorber materials of different band gaps was an efficient route to realize high performance light detection. The application of a thin sensitizing layer atop the TMDCs has proven to be a viable route to improve the photodetection performance due to the efficient charge separation at the interface, and fast charge transfer process due to the high carrier mobility. In this article, we review the progress made toward hybrid photodetector based on TMDCs with various sensitizers from metal to large band-gap semiconductor in architectures from zero-dimensional quantum dot to two-dimensional crystal.
机译：诸如WS_2和MoS_2之类的原子薄过渡金属二硫化碳（TMDC），由于其独特的特性，例如光学透明性，高载流子迁移率，宽可调带隙和强光散射性，为下一代光电子学打开了新的机遇。相互作用。光电检测性能主要取决于光激发电子空穴的光吸收效率和分离效率。使用一种光敏材料来实现具有全宽带响应，高光电导增益，高响应速度和高检测率的光电检测器是艰巨的挑战。由两种或更多种不同带隙的光吸收材料构成的光电检测器的构建是实现高性能光检测的有效途径。由于在界面处有效的电荷分离，以及由于高的载流子迁移率而导致的快速电荷转移过程，在TMDC上施加薄的敏化层已被证明是改善光电检测性能的可行途径。在本文中，我们回顾了在从零维量子点到二维晶体的体系结构中，基于从金属到大带隙半导体的各种敏化剂的基于TMDC的混合光电探测器的研究进展。

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  • 来源
    《Journal of Materials Research》 |2017年第22期|4115-4131|共17页
  • 作者

    Congpu Mu; Jianyong Xiang; Zhongyuan Liu;

  • 作者单位

    State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, People's Republic of China,Hebei Key Laboratory of Microstructure Material Physics, Yanshan University, Qinhuangdao 066004, People's Republic of China;

    State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, People's Republic of China;

    State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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