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Optical properties of defects in nitride semiconductors

机译:氮化物半导体中缺陷的光学性质

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摘要

Group Ⅲ nitrides are promising materials for light emitting diodes (LEDs). The occurrence of structural defects strongly affects the efficiency of these LEDs. We investigate the optical properties of basal plane stacking faults (BFSs), and the assignment of specific spectral features to distinct defect types by direct correlation of localized emission bands measured by cathodoluminescence in a scanning electron microscope with defects found in high resolution (scanning) transmission electron microscopy and electron beam induced current at identical sample spots. Thus, we are able to model the electronic structure of BSFs addressing Ⅰ_1, Ⅰ_2, and E type BSFs in GaN and AlGaN with low Al content. We find hints that BSFs in semipolar AlGaN layers cause local changes of the Al content, which strongly affects the usability of AlGaN as an electron blocking layer in nitride based LEDs.
机译:Ⅲ族氮化物是发光二极管(LED)的有前途的材料。结构缺陷的发生严重影响了这些LED的效率。我们通过扫描电子显微镜中通过阴极发光测量的局部发射带与高分辨率(扫描)透射中发现的缺陷的直接相关性,研究了基底平面堆叠缺陷(BFS)的光学特性,以及将特定光谱特征分配给不同缺陷类型的方法电子显微镜和电子束感应电流在相同的样品点上。因此,我们能够在低Al含量的GaN和AlGaN中对BSF的电子结构进行建模,这些BSF分别针对Ⅰ_1,Ⅰ_2和E型BSF。我们发现,半极性AlGaN层中的BSF会引起Al含量的局部变化,这会严重影响AlGaN作为氮化物基LED中电子阻挡层的可用性。

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  • 来源
    《Journal of Materials Research》 |2015年第20期|2977-2990|共14页
  • 作者单位

    Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany and Richter lighting technologies GmbH, 73540 Heubach, Germany;

    Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany;

    Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany;

    Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany and UMS GmbH, 89081 Ulm, Germany;

    Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany and Otto von Guericke University, 39106 Magdeburg, Germany;

    Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany and Hochschule Kempten, 87435 Kempten, Germany;

    Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany and U-L-M Photonics, 89081 Ulm, Germany;

    Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany;

    Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany;

    Institute of Optoelectronics, University of Ulm, 89081 Ulm, Germany and Palo Alto Research Center, Palo Alto, California 94304, USA;

    Institute of Optoelectronics, University of Ulm, 89081 Ulm, Germany and Automotive Lighting, 72762 Reutlingen, Germany;

    Institute of Optoelectronics, University of Ulm, 89081 Ulm, Germany;

    Institute of Optoelectronics, University of Ulm, 89081 Ulm, Germany;

    Electron Microscopy Group of Materials Science, University of Ulm, 89069 Ulm, Germany;

    Electron Microscopy Group of Materials Science, University of Ulm, 89069 Ulm, Germany;

    Electron Microscopy Group of Materials Science, University of Ulm, 89069 Ulm, Germany;

    Scientific Computing Centre Ulm, University of Ulm, 89081 Ulm, Germany;

    Institute of Electron Microscopy, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany and VEGA Grieshaber KG, 77761 Schiltach, Germany;

    Institute of Electron Microscopy, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany and Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria;

    Institute of Electron Microscopy, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany;

    Institute of Electron Microscopy, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany;

    Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany;

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