机译:氮化物半导体中缺陷的光学性质
Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany and Richter lighting technologies GmbH, 73540 Heubach, Germany;
Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany;
Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany;
Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany and UMS GmbH, 89081 Ulm, Germany;
Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany and Otto von Guericke University, 39106 Magdeburg, Germany;
Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany and Hochschule Kempten, 87435 Kempten, Germany;
Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany and U-L-M Photonics, 89081 Ulm, Germany;
Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany;
Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany;
Institute of Optoelectronics, University of Ulm, 89081 Ulm, Germany and Palo Alto Research Center, Palo Alto, California 94304, USA;
Institute of Optoelectronics, University of Ulm, 89081 Ulm, Germany and Automotive Lighting, 72762 Reutlingen, Germany;
Institute of Optoelectronics, University of Ulm, 89081 Ulm, Germany;
Institute of Optoelectronics, University of Ulm, 89081 Ulm, Germany;
Electron Microscopy Group of Materials Science, University of Ulm, 89069 Ulm, Germany;
Electron Microscopy Group of Materials Science, University of Ulm, 89069 Ulm, Germany;
Electron Microscopy Group of Materials Science, University of Ulm, 89069 Ulm, Germany;
Scientific Computing Centre Ulm, University of Ulm, 89081 Ulm, Germany;
Institute of Electron Microscopy, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany and VEGA Grieshaber KG, 77761 Schiltach, Germany;
Institute of Electron Microscopy, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany and Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria;
Institute of Electron Microscopy, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany;
Institute of Electron Microscopy, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany;
Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany;
机译:全光晶体管使用深液缺陷在氮化物半导体中进行室温光学计算
机译:体半导体和石墨烯/氮化硼的光学性质:具有导数间断校正的密度泛函能的Bethe-Salpeter方程
机译:应变和合金成分的不均匀性对III族氮化物半导体的电子和光学性质的影响
机译:图案化衬底上生长的氮化物化合物半导体的微观结构特性和缺陷演化:透射电子显微镜研究
机译:氮化镓,氮化铝和氮化铟半导体的研究:结构,光学,电子和界面特性。
机译:GA2SE3缺陷半导体:直接频带边缘和光学性能的研究
机译:在图案化基板上生长的氮化物化合物半导体的微观结构性质和缺陷演化:透射电子显微镜研究
机译:III-V氮化物宽带隙半导体的光学和电学特性。年报,1997年4月1日至1998年5月31日