Realization of enhanced room temperature ferromagnetism in pure and V-doped ZnO films on TOP functionalization

G. Jayalakshmi; T. Balasubramanian

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Realization of enhanced room temperature ferromagnetism in pure and V-doped ZnO films on TOP functionalization

机译：通过TOP功能化实现纯净和V掺杂ZnO薄膜中增强的室温铁磁性

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In the present study, we report an activation and enhancement of room temperature ferromagnetism in pure ZnO and V-doped ZnO (Zn_(0.95)V_(0.05)O and Zn_(0.90)V_(0.10)O) thin films by trioctylphosphine (TOP) functionalization. X-ray diffraction patterns show a slight decrease in the intensity of the diffraction peak on TOP functionalization. Atomic force micrographs of pure and V-doped ZnO films reveal no disorder in the film surface on TOP functionalization. The chemical bond formation of TOP on ZnO film surface was examined by x-ray photoelectron spectroscopy measurements. Photoluminescence measurements of TOP-functionalized ZnO films show enhancements of UV emission and quenching of visible emission. TOP-functionalized ZnO films reveal enhanced ferromagnetic behavior as evidenced from vibrating sample magnetometer measurements.

机译：在本研究中，我们报告了三辛基膦（TOP）在纯ZnO和V掺杂的ZnO（Zn_（0.95）V_（0.05）O和Zn_（0.90）V_（0.10）O）薄膜中激活和增强室温铁磁性）功能化。 X射线衍射图显示TOP功能化时衍射峰的强度略有下降。纯的和V掺杂的ZnO薄膜的原子力显微镜照片显示，在TOP功能化过程中，薄膜表面无紊乱。通过X射线光电子能谱测量法检查了在ZnO膜表面上TOP的化学键形成。 TOP-官能化的ZnO薄膜的光致发光测量显示出UV发射增强和可见光发射猝灭。振动样品磁强计测量证明，TOP功能化的ZnO膜显示出增强的铁磁性能。

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《Journal of Materials Research》 |2014年第1期|158-165|共8页
作者
G. Jayalakshmi; T. Balasubramanian;
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Department of Physics, Thin film Laboratory, National Institute of Technology, Tiruchirappalli 620015, India;

Department of Physics, Thin film Laboratory, National Institute of Technology, Tiruchirappalli 620015, India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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Realization of enhanced room temperature ferromagnetism in pure and V-doped ZnO films on TOP functionalization

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