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Stress evolution in Si during low-energy ion bombardment

机译：低能离子轰击过程中Si中的应力演化

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摘要

Measurements of stress evolution during low-energy argon ion bombardment of Si have been made using a real-time wafer curvature technique. During irradiation, the stress reaches a steady-state compressive value that depends on the flux and energy. Once irradiation is terminated, the measured stress relaxes slightly in a short period of time to a final value. To understand the ion-induced stress evolution and relaxation mechanisms, we account for the measured behavior with a model for viscous relaxation that includes the ion-induced generation and annihilation of flow defects in an amorphous Si surface layer. The analysis indicates that bimolecular annihilation (i.e., defect recombination) is the dominant mechanism controlling the defect concentration both during irradiation and after the cessation of irradiation. From the analysis, we determine a value for the fluidity per flow defect.
机译：使用实时晶圆曲率技术已经进行了低能氩离子轰击Si过程中应力演变的测量。在辐照期间，应力达到取决于通量和能量的稳态压缩值。辐照终止后，测得的应力会在短时间内稍微松弛到最终值。为了理解离子诱导的应力演化和弛豫机制，我们使用粘性弛豫模型说明了测量的行为，该模型包括离子诱导的非晶硅表面层中的流缺陷的产生和an灭。分析表明，双分子an灭（即，缺陷复合）是在辐照期间和停止辐照之后控制缺陷浓度的主要机理。通过分析，我们确定每个流缺陷的流动性值。

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  • 来源
    《Journal of Materials Research》 |2014年第24期|2942-2948|共7页
  • 作者

    Yohei Ishii; Charbel S. Madi; Michael J. Aziz; Eric Chason;

  • 作者单位

    Brown University, School of Engineering, Providence, Rhode Island 02912, USA, and Hitachi High Technologies America, Inc, Semiconductor Equipment Division, Dallas, Texas 75261-2208, USA;

    Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA, and Department of Physics, American University of Beirut, Beirut 1107 2020, Lebanon;

    Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA;

    Brown University, School of Engineering, Providence, Rhode Island 02912, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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