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首页> 外文期刊>Journal of Materials Research >Bulk response and grain boundary microelectrical activity of high T_C BaTiO_3-(Bi_(1/2)K_(1/2))TiO_3-based positive temperature coefficient of resistance ceramics
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Bulk response and grain boundary microelectrical activity of high T_C BaTiO_3-(Bi_(1/2)K_(1/2))TiO_3-based positive temperature coefficient of resistance ceramics

机译：高T_C BaTiO_3-（Bi_（1/2）K_（1/2）TiO_3系高电阻陶瓷正温度系数的体响应和晶界微电活性

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摘要

Lead-free positive temperature coefficient of resistance (PTC) thermistors were synthesized from (1 - x/100)BaTiO_3-(x/100)(Bi_(1/2)K_(1/2))TiO_3-based solid solutions, using a conventional mixed-oxide fabrication route, and sintered in N_2 followed by air annealing. A maximum T_c of 205 ℃ was achieved for x ＝ 20. An increase in x from 0 to 20 decreased the grain size by more than 92% and increased room temperature resistivity (ρ_(RT)) by 7 orders of magnitude. For x ≤ 10, PTC ratio (ρ_(max)/ρ_(min))≈10~(4.5) and temperature coefficient of resistivity (α) ＞ 10.3%/℃ were achieved using Mn and Al_2O_3:SiO_2:TiO_2 (AST) additions. For x ＞ 10, ρ_(max)/ρ_(min) ＞ 10~3 and α＞ 8%/℃ were only obtained in samples sintered in N_2 without subsequent air annealing. Complex impedance analysis revealed three relaxation processes, attributed to a semiconducting grain core, a PTC active grain boundary interface, and a grain boundary insulating layer. Local electrical activity was investigated by hot-stage conductive mode microscopy. The existence of symmetrical grain boundary electron beam-induced current and P-conductivity contrast at the grain boundaries, consistent with the presence of an electron trapping two-dimensional grain boundary plane, compensated by positive space charge layers and a low conductivity vacancy-rich layer, was revealed for the first time within this system.
机译：使用（1-x / 100）BaTiO_3-（x / 100）（Bi_（1/2）K_（1/2））TiO_3固溶体合成了无铅正温度系数电阻（PTC）热敏电阻常规的混合氧化物制造路线，并在N_2中烧结，然后进行空气退火。 x ＝ 20时，最高T_c为205℃。x从0增大到20可使晶粒尺寸减小92％以上，室温电阻率（ρ_（RT））增大7个数量级。当x≤10时，使用Mn和Al_2O_3：SiO_2：TiO_2（AST）可获得PTC比（ρ_（max）/ρ_（min））≈10〜（4.5）和电阻率温度系数（α）＞ 10.3％/℃。补充。对于x＞ 10，仅在N_2中烧结的样品中获得ρ_（max）/ρ_（min）＞ 10〜3和α＞ 8％/℃，而没有随后的空气退火。复阻抗分析显示出三个弛豫过程，这归因于半导体晶核，PTC活性晶界界面和晶界绝缘层。通过热台导电模式显微镜研究局部电活动。对称的晶界电子束感应电流的存在和晶界处的P导电性对比，与存在电子陷阱的二维晶界平面一致，并由正空间电荷层和低电导率的空位富集层补偿，是在此系统中首次显示。

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  • 来源
    《Journal of Materials Research》 |2013年第21期|2946-2959|共14页
  • 作者

    Mohammad A. Zubair; Hiroaki Takeda; Colin Leach; Robert Freer; Hoshina; Takaaki Tsurumi;

  • 作者单位

    Department of Metallurgy and Ceramic Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan and Materials Science Center, School of Materials, University of Manchester, Manchester Ml 7HS, United Kingdom;

    Department of Metallurgy and Ceramic Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Materials Science Center, School of Materials, University of Manchester, Manchester Ml 7HS, United Kingdom Takuya;

    Materials Science Center, School of Materials, University of Manchester, Manchester Ml 7HS, United Kingdom Takuya;

    Department of Metallurgy and Ceramic Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Department of Metallurgy and Ceramic Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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