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首页> 外文期刊>Journal of Materials Research >Electrical study of ZrO_2/Si system formed at different oxidationitridation temperatures for extended duration in N_2O ambient
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Electrical study of ZrO_2/Si system formed at different oxidationitridation temperatures for extended duration in N_2O ambient

机译：N_2O环境中不同氧化/氮化温度下形成的ZrO_2 / Si体系的电学研究

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摘要

Electrical properties of ZrO_2 formed by simultaneous oxidation and nitridation of sputtered Zr thin films on Si have been systematically investigated. Various oxidationitridation temperatures (500, 700, 900, and 1100 ℃) have been carried out in N_2O ambient for an extended time of 20 min. Results indicated that the sample oxidized and nitrided at 700 °C possessed the highest effective dielectric constant of 18.22 and electrical breakdown field of 10.7 MV/cm at a current density of 10~(-6) A/cm~2. This is attributed to the lowest effective oxide charge, interface-trap density, and total interface-trap density. The Fowler-Nordheim tunneling mechanism has been investigated for all samples and the highest value of barrier height extracted between the conduction band edges of oxide and semiconductor was 1.22 eV.
机译：对Si上溅射的Zr薄膜同时氧化和氮化形成的ZrO_2的电学性能进行了系统的研究。在N_2O环境中进行各种氧化/氮化温度（500、700、900和1100℃）的时间延长了20分钟。结果表明，在电流密度为10〜（-6）A / cm〜2的条件下，经700°C氧化和氮化后的样品具有最高的有效介电常数18.22和10.7 MV / cm的电击穿场。这归因于最低的有效氧化物电荷，界面陷阱密度和总界面陷阱密度。对所有样品均研究了Fowler-Nordheim隧穿机理，并且在氧化物和半导体的导带边缘之间提取的势垒高度的最大值为1.22 eV。

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  • 来源
    《Journal of Materials Research》 |2013年第21期|2985-2989|共5页
  • 作者

    Yew Hoong Wong; Kuan Yew Cheong;

  • 作者单位

    Center of Advanced Manufacturing and Material Processing, Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia;

    Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang, Malaysia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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