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Band engineering of type-II ZnO/ZnSe heterostructures for solar cell applications

机译：用于太阳能电池的II型ZnO / ZnSe异质结构的能带工程

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摘要

Two kinds of type-II heterostructures (HSs) of ZnO (wurtzite)/ZnSe (wurtzite) [ZnO (WZ)/ZnSe (WZ)] and ZnO (wurtzite)/ZnSe (zinc blende) [ZnO (WZ)/ZnSe (ZB)] were designed for photovoltaic applications by first-principle calculations. The calculated effective bandgap of 1.51 eV for the ZnO (WZ)/ZnSe (WZ) HS is more favorable for solar cell applications compared to that of 1.69 eV for the ZnO (WZ)/ZnSe (ZB) HS. Furthermore, the electrons and holes are more effectively separated at the interface of ZnO (WZ)/ZnSe (WZ) HS due to the stronger misfit stress field. Finally, a strained ZB ZnSe layer was introduced to transport the separated holes from WZ ZnSe layer, and an optimal structure of ZnO (WZ)/ZnSe (WZ)/ZnSe (ZB) was proposed to realize a solar cell with near-infrared response.
机译：ZnO（纤锌矿）/ ZnSe（纤锌矿）[ZnO（WZ）/ ZnSe（WZ）]和ZnO（纤锌矿）/ ZnSe（锌共混物）[ZnO（WZ）/ ZnSe（ ZB）]是根据第一原理计算设计的，用于光伏应用。与ZnO（WZ）/ ZnSe（ZB）HS的1.69 eV相比，所计算的ZnO（WZ）/ ZnSe（WZ）HS的有效带隙为1.51 eV更有利于太阳能电池应用。此外，由于较强的失配应力场，电子和空穴在ZnO（WZ）/ ZnSe（WZ）HS的界面处更有效地分离。最后，引入应变的ZB ZnSe层以传输从WZ ZnSe层分离出的空穴，并提出了ZnO（WZ）/ ZnSe（WZ）/ ZnSe（ZB）的最佳结构以实现具有近红外响应的太阳能电池。

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  • 来源
    《Journal of Materials Research》 |2012年第4期|p.730-733|共4页
  • 作者

    Jianchao Ni; Zhiming Wu; Xiangan Lin; Jinjian Zheng; Shuping Li; Jing Li; Junyong Kang;

  • 作者单位

    Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China;

    Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China;

    Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China;

    Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China;

    Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China;

    Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China;

    Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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