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Silicon carbide-induced piezoelectric β-phase in poly(vinylidene fluoride) and its properties

机译：聚偏二氟乙烯中碳化硅诱导的压电β相及其性质

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摘要

The piezoelectric p-phase of poly(vinylidene fluoride) (PVDF) has been synthesized through solution route in presence of varying percentage of silicon carbide (SiC). Various measurements were conducted to analyze the effect of SiC addition on structural, mechanical, and dielectric properties, as also the properties affecting hydrophilicity and morphology of PVDF. The x-ray diffraction, Fourier transform infrared spectroscopic and differential scanning calorimetry analyses confirm the presence of P-phase of PVDF on addition of SiC. The Young's modulus of the composites increases as compared with pristine PVDF. The hydrophilic nature of the composites improves with increasing SiC content. Dielectric constant increases in composites, especially at lower frequency range and the relaxation pattern in the crystalline phase changes significantly causing reduction of relaxation frequency with increasing SiC concentration.
机译：聚偏二氟乙烯（PVDF）的压电p相已通过固溶途径在碳化硅（SiC）百分比变化的情况下合成。进行了各种测量，以分析SiC添加对结构，机械和介电性能的影响，以及影响PVDF亲水性和形态的性能。 X射线衍射，傅立叶变换红外光谱和差示扫描量热分析证实了添加SiC后PVDF的P相的存在。与原始PVDF相比，复合材料的杨氏模量增加。复合材料的亲水性随SiC含量的增加而提高。复合材料的介电常数增加，尤其是在较低的频率范围内，并且晶相中的弛豫模式会发生显着变化，从而随着SiC浓度的增加而导致弛豫频率降低。

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  • 来源
    《Journal of Materials Research》 |2012年第14期|p.1838-1845|共8页
  • 作者

    Jay Sheth; Devendra Kumar; Vimal K. Tiwari; Pralay Maiti;

  • 作者单位

    Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, Varanasi-221005, India;

    Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, Varanasi-221005, India;

    School of Materials Science and Technology, Institute of Technology, Banaras Hindu University, Varanasi-221005, India;

    School of Materials Science and Technology, Institute of Technology, Banaras Hindu University, Varanasi-221005, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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