Electron transport in semiconducting SnO_2: Intentional bulk donors and acceptors, the interface, and the surface - CORRIGENDUM

Oliver Bierwagen; Takahiro Nagata; Mark E. White; Min-Ying Tsai; James S. Speck

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Electron transport in semiconducting SnO_2: Intentional bulk donors and acceptors, the interface, and the surface - CORRIGENDUM

机译：半导体SnO_2中的电子传输：有意的体供体和受体，界面和表面-CORRIGENDUM

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This work was supported in part by the National Science Foundation NSF MRSEC and MWN Programs under Award Nos. DMR05-20415 and DMR09-09203. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF-funded NNIN network. O.B. was supported by a grant from the AFOSR Award No. FA9550-08-1-0461.

机译：这项工作得到了美国国家科学基金会NSF MRSEC和MWN计划的部分支持，编号为DMR05-20415和DMR09-09203。这项工作的一部分是在UCSB纳米制造工厂完成的，该工厂是NSF资助的NNIN网络的一部分。 O.B.获得了AFOSR奖FA9550-08-1-0461的资助。

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《Journal of Materials Research》 |2012年第19期|p.2578|共1页
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Oliver Bierwagen; Takahiro Nagata; Mark E. White; Min-Ying Tsai; James S. Speck;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Electron transport in semiconducting SnO_2: Intentional bulk donors and acceptors, the interface, and the surface - CORRIGENDUM

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