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首页> 外文期刊>Journal of Materials Research >P-type doping of Hf_(0.6)Zr_(0.4)NiSn half-Heusler thermoelectric materials prepared by levitation melting and spark plasma sintering
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P-type doping of Hf_(0.6)Zr_(0.4)NiSn half-Heusler thermoelectric materials prepared by levitation melting and spark plasma sintering

机译：悬浮熔化和火花等离子体烧结制备Hf_（0.6）Zr_（0.4）NiSn半霍斯勒热电材料的P型掺杂

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摘要

The Y-doped (Hf_(0.6)Zr_(0.4))_(1-x) Y_xNiSn (x = 0, 0.01, 0.02, 0.04, 0.06, 0.1, and 0.2) half-Heusler alloys have been prepared by levitation melting and spark plasma sintering. The effect of Y doping on thermoelectric properties of the alloys was investigated in the temperature range of 300-900 K. Y-doped samples had the lower electrical conductivity compared with the parent compound without Y doping. The thermal conductivity had weak dependence on Y doping content. The absolute values of Seebeck coefficient decreased significantly when x < 0.04. The sign of Seebeck coefficient turned from negative to positive at room temperature for x = 0.04 and 0.1, which means that the hole carriers became dominant in these alloys. However, the alloys changed to n-type conduction again at high temperatures. The maximum figure of merit value of about 0.45 was obtained at 780 K for the undoped sample.
机译：已通过悬浮熔融法制备了掺Y（Hf_（0.6）Zr_（0.4））_（1-x）Y_xNiSn（x = 0、0.01、0.02、0.04、0.06、0.1和0.2）的半霍斯勒合金。火花等离子体烧结。在300-900 K的温度范围内，研究了Y掺杂对合金热电性能的影响。与没有Y掺杂的母体化合物相比，Y掺杂的样品具有较低的电导率。导热系数对Y掺杂含量的依赖性较弱。当x <0.04时，塞贝克系数的绝对值显着下降。对于x = 0.04和0.1，在室温下，塞贝克系数的符号从负变为正，这意味着空穴载流子在这些合金中占主导地位。然而，合金在高温下再次变为n型导电。对于未掺杂样品，在780 K时可获得约0.45的最大品质因数。

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  • 来源
    《Journal of Materials Research》 |2011年第15期|p.1913-1918|共6页
  • 作者

    Kai Xiao; Tie-Jun Zhu; Cui Yu; Sheng-Hui Yang; Xin-Bing Zhao;

  • 作者单位

    State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;

    State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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