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首页> 外文期刊>Journal of Materials Research >Distribution of visible luminescence centers in hydrogen-doped ZnO
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Distribution of visible luminescence centers in hydrogen-doped ZnO

机译：氢掺杂ZnO中可见光发光中心的分布

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摘要

ZnO crystals have been investigated by scanning cathodoluminescence microscopy and spectroscopy at 80 K following hydrogen incorporation by plasma exposure. The intensity of the ZnO near-band-edge (NBE) emission is greatly enhanced while the defect-related green emission is quenched following plasma treatment. These effects are attributed to the passivation of zinc vacancies by hydrogen. The green and yellow intensities and their intensity ratios to the NBE vary with excitation depth for both undoped and H-doped ZnO crystals. The intensities of the green and yellow emissions exhibit sublinear dependencies on electron beam excitation density while the NBE intensity increases linearly with the excitation density. These saturation effects with increasing excitation density must be taken into account when assessing defects in ZnO by luminescence characterization.
机译：ZnO晶体是通过在等离子体暴露下掺入氢后，在80 K下通过扫描阴极荧光显微镜和光谱学研究的。 ZnO近带边缘（NBE）发射的强度大大提高，而与缺陷相关的绿色发射在等离子体处理后被淬灭。这些作用归因于氢对锌空位的钝化。对于未掺杂和氢掺杂的ZnO晶体，绿色和黄色的强度及其与NBE的强度比均随激发深度而变化。绿色和黄色发射的强度与电子束激发密度呈线性关系，而NBE强度随激发密度线性增加。通过发光特性评估ZnO中的缺陷时，必须考虑激发密度增加的饱和效应。

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  • 来源
    《Journal of Materials Research》 |2011年第23期|p.2912-2915|共4页
  • 作者

    Laurent L.C. Lem; Cuong Ton-That; Matthew R. Phillips;

  • 作者单位

    Department of Physics and Advanced Materials, University of Technology Sydney, Broadway, New South Wales 2007, Australia;

    Department of Physics and Advanced Materials, University of Technology Sydney, Broadway, New South Wales 2007, Australia;

    Department of Physics and Advanced Materials, University of Technology Sydney, Broadway, New South Wales 2007, Australia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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