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A plastic damage model for finite element analysis of cracking of silicon under indentation

机译:压痕下硅裂纹有限元分析的塑性损伤模型

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摘要

A modified plastic damage model that accounts for tensile damage and compressive plasticity as well as interactions among them is adopted to simulate the indentation-induced cracking of silicon under Berkovich, cube corner, and Vickers indenters. Simulations with this model capture not only the well-known cracking geometries in indented ceramics, such as radial, median, lateral, and half penny (Vickers indenter) cracks, but also the recent experimentally discovered quarter penny cracks under Berkovich and cube corner pyramidal indenters. The quarter penny cracks are found to be formed by the coalescence of radial and median cracks for the first time in the simulation. Loads at which radial and half penny cracks are initiated in silicon are generally close to the experimental values reported in the literature, and the crack lengths on the sample surface agree well with both the current experimental measurements and analytical results by fracture mechanics.
机译:采用修正的塑性损伤模型,该模型考虑了拉伸损伤和压缩塑性以及它们之间的相互作用,以模拟在Berkovich,立方角和维氏压头下压痕引起的硅裂纹。使用该模型进行的模拟不仅捕获了压痕陶瓷中众所周知的开裂几何形状,例如径向,中值,横向和半便士(维氏压头)裂纹,而且还捕获了最近在实验中发现的在贝尔科维奇和立方角锥形压头下的四分之一便士裂纹。 。在模拟中首次发现四分之一便士裂缝是由径向裂缝和中间裂缝的合并形成的。硅中产生径向裂纹和半个便士裂纹的载荷通常与文献报道的实验值相近,并且样品表面的裂纹长度与当前的实验测量和断裂力学的分析结果都非常吻合。

著录项

  • 来源
    《Journal of Materials Research》 |2010年第11期|p.2224-2237|共14页
  • 作者单位

    School of Materials Science and Engineering, Shanghai Jiao Tong University,Shanghai 200240, People's Republic of China;

    rnSchool of Materials Science and Engineering, Shanghai Jiao Tong University,Shanghai 200240, People's Republic of China;

    rnSchool of Materials Science and Engineering, Shanghai Jiao Tong University,Shanghai 200240, People's Republic of China;

    rnSchool of Materials Science and Engineering, Shanghai Jiao Tong University,Shanghai 200240, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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