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首页> 外文期刊>Journal of Materials Research >The Effect Of Boron Doping And Gamma Irradiation On The Structure And Properties Of Microwave Chemical Vapor Deposited Boron-doped Diamond Films
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The Effect Of Boron Doping And Gamma Irradiation On The Structure And Properties Of Microwave Chemical Vapor Deposited Boron-doped Diamond Films

机译：硼掺杂和γ射线辐照对微波化学气相沉积硼掺杂金刚石膜结构和性能的影响

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摘要

We investigated the effects of gamma irradiation doses of 50, 100, and 10~3 kGy on boron-doped diamond (BDD) thin films synthesized using microwave plasma-assisted chemical vapor deposition with varying boron concentrations of [B]/[C]_(gas) = 100, 1000, 2000, and 4000 ppm. The diamond thin films were characterized prior to and post-irradiation and the influence was assessed in terms of morphology, structure, and physical properties using scanning electron microscopy, atomic force microscopy, x-ray diffraction, vibrational spectroscopy (Raman and IR), x-ray photoelectron spectroscopy, and electrical measurement techniques. The results clearly showed that the response of gamma irradiation on BDD films was distinctive compared to those of undoped diamond films with changes in electronic behavior from metallic (>10~(19) to 10~(20) cm~(-3)) to semiconducting (<10~(19) cm~(-3)), especially in the case of heavily boron-doped diamond films demonstrated by micro-Raman spectroscopy and electrical property characteristics. In fact, this modification in electrical property behavior induced by "gamma conditioning" can be effectively used to fine control boron doping in chemically vapor deposited diamond much needed for various electronic devices. The "gamma conditioning" refers to material processing by radiation which helps to passivate electrically active boron and defects with hydrogen migration thus fine tunes the boron acceptor concentration albeit that this is difficult to achieve during BDD film deposition. In addition, the results also indicate that almost all of the BDD films studied hereby tend to reach a state of damage saturation when submitted to gamma irradiation of 10~3 kGy. We discuss our novel findings in terms of the interplay of boron-hydrogen in diamond with possible multiple scenarios: (i) the generation of point/Frenkel defects due to Compton scattered electrons, (ii) the formation of a nonmetallic boron-rich borocarbide (e.g., B_(13)C_2) phase, (iii) the passivation of electrically active acceptor (B) sites due to the invariable presence of H in the grains and at the grain boundaries, (iv) the desorption of H from the diamond surface, and (v) the "priming or pumping" effect, which improves the electronic properties by compensating for the shallow boron acceptors to produce semiconducting/insulating material, verified by the cold neutron depth profiling technique.
机译：我们研究了50、100和10〜3 kGy的伽马射线辐照剂量对使用硼等离子体[B] / [C] _的微波等离子体辅助化学气相沉积合成的掺硼金刚石（BDD）薄膜的影响。 （气体）= 100、1000、2000和4000 ppm。在辐照前后对金刚石薄膜进行表征，并使用扫描电子显微镜，原子力显微镜，X射线衍射，振动光谱法（拉曼光谱和红外光谱）对形态，结构和物理性质方面的影响进行评估。射线光电子能谱和电测量技术。结果清楚地表明，与未掺杂的金刚石膜相比，BDD膜上的γ辐射响应具有明显的变化，其电子行为从金属（> 10〜（19）到10〜（20）cm〜（-3）到半导体（<10〜（19）cm〜（-3）），特别是在通过微拉曼光谱法和电特性表征证明重掺杂硼的金刚石薄膜的情况下。实际上，由“伽马调节”引起的电性能变化可以有效地用于精细控制各种电子设备所需的化学气相沉积金刚石中的硼掺杂。 “伽马调节”是指通过辐射进行的材料处理，该材料有助于钝化电活性硼和具有氢迁移的缺陷，因此可以微调硼受体的浓度，尽管这在BDD膜沉积过程中很难实现。另外，结果还表明，据此研究的几乎所有的BDD膜在经受10〜3kGy的γ射线照射时趋于达到损伤饱和状态。我们将就可能存在多种情况的金刚石中硼氢的相互作用讨论我们的新发现：（i）由于康普顿散射电子而产生点/弗伦克缺陷，（ii）形成非金属的富硼硼碳化物（例如B_（13）C_2）相，（iii）由于晶粒中和晶界中H的不变存在而使电活性受体（B）部位钝化，（iv）H从金刚石表面解吸（v）“灌注或泵浦”效应，该效应通过补偿浅硼受体以产生半导体/绝缘材料来改善电子性能，并通过冷中子深度轮廓技术进行了验证。

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  • 来源
    《Journal of Materials Research》 |2009年第4期|1498-1512|共15页
  • 作者

    S. Gupta; M. Muralikiran; J. Farmer; L.R. Cao; R.G. Downing;

  • 作者单位

    Missouri University Research Reactor, University of Missouri-Columbia, Columbia, Missouri 65211;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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