Grain growth and void formation in dielectric-encapsulated Cu thin films

B. Yao; T. Sun; V. Kumar; K. Barmak; K.R. Coffey

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Grain growth and void formation in dielectric-encapsulated Cu thin films

机译：电介质封装的铜薄膜中的晶粒生长和空隙形成

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Grain growth in 40-nm-thick Cu films encapsulated by over- and under-layers of SiO_2, Al_2O_3, Si_3N_4, and MgO was investigated. The films were magnetron sputter deposited onto cooled SiO_2/Si substrates in an ultrahigh vacuum purity environment. Ex situ annealing was performed at 400 and 800 ℃ in 1 atm reducing gas. Films deposited at -120 ℃ exhibited more extensive grain growth after annealing than films deposited at -40 ℃. Films annealed at room temperature had grain sizes less than 35 nm. All films exhibited some void formation after annealing at 400 and 800 ℃, but the films encapsulated in Al_2O_3 exhibited the lowest area fraction of voids. The mean grain sizes of the Al_2O_3-encapsulated films, as measured by the linear intercept method, were 86 and 134 nm after annealing at 400 and 800 ℃, respectively.

机译：研究了由SiO_2，Al_2O_3，Si_3N_4和MgO的上层和下层封装的40 nm厚铜膜中的晶粒生长。在超高真空纯度环境中，将磁控管溅射薄膜沉积到冷却的SiO_2 / Si衬底上。在1个大气压的还原气体中于400和800℃进行异位退火。在-120℃沉积的薄膜退火后比在-40℃沉积的薄膜表现出更大的晶粒生长。在室温下退火的膜的晶粒尺寸小于35nm。在400和800℃退火后，所有薄膜都表现出一定的空隙形成，但包埋在Al_2O_3中的薄膜的空隙面积最低。通过线性截距法测得的Al_2O_3薄膜的平均晶粒尺寸在400和800℃退火后分别为86和134 nm。

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《Journal of Materials Research》 |2008年第7期|2033-2039|共7页
作者
B. Yao; T. Sun; V. Kumar; K. Barmak; K.R. Coffey;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Grain growth and void formation in dielectric-encapsulated Cu thin films

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