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首页> 外文期刊>Journal of Materials Research >The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing
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The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing

机译：高压气压法低温制备高取向锆钛酸铅钛薄膜的替代途径

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摘要

The Pb(Zr_xTi_(1-x))O_3 (PZT) films sputter deposited on LaNiO_3(LNO)/Si(100) substrates were recrystallized to highly (l00)-oriented perovskite structure by high oxygen-pressure processing (HOPP) and high argon-pressure processing (HAPP), which were performed at a relatively low temperature 400 ℃ compared to the normally required temperature condition above 600 ℃. Ferroelectricity of PZT films was investigated by a measurement of P-E hysteresis loop. The P-E hysteresis loops of the PZT(52/48) and PZT(30/70) films after HOPP showed better squareness and larger remnant polarization than those of as-sputtered ones prepared at a high temperature of 600 ℃. Although the PZT films with HAPP also showed a high (l00)-oriented perovskite structure and obvious ferroelectricity, their P-E loops suggested relatively poor ferroelectricity compared to those of the PZT films with HOPP. This means that a further optimization for HAPP is needed to improve ferroelectricity of PZT films.
机译：溅射沉积在LaNiO_3（LNO）/ Si（100）衬底上的Pb（Zr_xTi_（1-x））O_3（PZT）膜通过高氧压处理（HOPP）和高氧压重结晶为高度（100）取向钙钛矿结构。与通常要求的高于600℃的温度条件相比，氩压处理（HAPP）在相对较低的400℃温度下进行。通过测量P-E磁滞回线来研究PZT膜的铁电性。 HOPP后的PZT（52/48）和PZT（30/70）薄膜的P-E磁滞回线比在600℃高温下制备的溅射薄膜具有更好的矩形度和更大的残余极化。尽管具有HAPP的PZT膜还显示出高（100）取向的钙钛矿结构和明显的铁电性，但与带有HOPP的PZT膜相比，它们的P-E回路显示出较差的铁电性。这意味着需要对HAPP进行进一步优化，以改善PZT薄膜的铁电性。

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