首页> 外文期刊>Journal of Materials Research >Change In Polarity Of Zinc Oxide Films Grown On Sapphire Substrates Without Insertion Of Any Buffer Layer
【24h】

Change In Polarity Of Zinc Oxide Films Grown On Sapphire Substrates Without Insertion Of Any Buffer Layer

机译:在没有插入任何缓冲层的情况下,在蓝宝石衬底上生长的氧化锌膜的极性变化

获取原文
获取原文并翻译 | 示例
           

摘要

We have investigated the polarity of zinc oxide (ZnO) and Al-doped ZnO films grown on (1120) and (0001) sapphire substrates, using coaxial impact collision ion scattering spectroscopy. The films grown by pulsed laser deposition with a nominally undoped ZnO ceramic target had a (0001) surface, whereas the films prepared with a 1 mol% Al-doped ZnO ceramic target had a (0001) surface. The usage of Al-doped and undoped targets caused no difference in the in-plane lattice orientation. Electron microscope observations revealed that polarity change due to doping occurred without the formation of any interfacial phase between ZnO and sapphire.
机译:我们使用同轴碰撞碰撞离子散射光谱技术研究了在(1120)和(0001)蓝宝石衬底上生长的氧化锌(ZnO)和掺铝的ZnO薄膜的极性。用名义上未掺杂的ZnO陶瓷靶通过脉冲激光沉积生长的膜具有(0001)表面,而用1mol%的Al掺杂的ZnO陶瓷靶制备的膜具有(0001)表面。 Al掺杂和非掺杂靶的使用在面内晶格取向上没有差异。电子显微镜观察表明,由于掺杂而引起的极性变化没有在ZnO和蓝宝石之间形成任何界面相。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号