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首页> 外文期刊>Journal of Materials Research >Effects of abrasive particle size and molecular weight of poly(acrylic acid) in ceria slurry on removal selectivity of SiO_2/Si_3N_4 films in shallow trench isolation chemical mechanical planarization
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Effects of abrasive particle size and molecular weight of poly(acrylic acid) in ceria slurry on removal selectivity of SiO_2/Si_3N_4 films in shallow trench isolation chemical mechanical planarization

机译:二氧化铈浆料中磨料粒度和聚丙烯酸分子量对浅沟槽隔离化学机械平面化中SiO_2 / Si_3N_4薄膜去除选择性的影响

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摘要

The effects of the molecular weight and concentration of poly(acrylic acid) (PAA) with different primary abrasive sizes in ceria slurry on the nitride film loss, removal rate, film surface roughness, and removal selectivity of SiO_2-to-Si_3N_4 films were investigated by performing chemical mechanical polishing (CMP) experiments using blanket and patterned wafers. In the case of the blanket wafers, we found that for a lower PAA molecular weight, the removal selectivity of SiO_2-to-Si_3N_4 films increased more significantly with increasing PAA concentration in slurry containing a larger primary abrasive size. For the patterned wafers, with a higher PAA molecular weight in the ceria slurry suspension, the erosion of the Si_3N_4 film was less, but the removed amount was also smaller, and the surface roughness became worse after CMP. These results can be qualitatively explained by the layer of PAA adsorbed on the film surface, in terms of electrostatic interaction and rheological behavior.
机译:研究了二氧化铈浆液中初级磨料尺寸不同的聚丙烯酸(PAA)的分子量和浓度对SiO_2-Si-3N_4薄膜氮化膜损失,去除率,膜表面粗糙度和去除选择性的影响。通过使用橡皮布和图案化晶圆执行化学机械抛光(CMP)实验。在橡皮布的情况下,我们发现对于较低的PAA分子量,SiO_2-Si_3N_4膜的去除选择性随着包含较大初级磨料尺寸的浆料中PAA浓度的增加而显着增加。对于图案化的晶片,在二氧化铈浆料悬浮液中具有较高的PAA分子量,Si_3N_4膜的腐蚀较少,但是去除量也较小,并且CMP后表面粗糙度变差。就静电相互作用和流变行为而言,这些结果可以通过吸附在薄膜表面的PAA层进行定性解释。

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