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Preferable orientation of turbostratic BN basal planes from an x-ray absorption study

机译：从X射线吸收研究可得出涡轮层BN基面的优先方向

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摘要

Two cubic boron nitride (c-BN) thin films (thickness, 80 nm), which were grown on silicon by mass-selected ion beam deposition and thin diamond film-coated silicon by magnetron sputtering technique respectively, were investigated by x-ray absorption near-edge spectroscopy (XANES) at the B K-edge. The angular dependences of the XANES recorded in fluorescence yield (FY) were used to show that the preferable orientation of the sp_2-bonded turbostratic BN (t-BN) basal planes at the interfacial layers between the top c-BN film and Si substrate is normal or nearly normal to the substrate, which is consistent with previous transmission electron microscope analysis. The angular dependence was also used to show that the film deposited on diamond-coated Si has a higher relative amount of ordered t-BN at its film-substrate interface than the film on Si substrate. This work that shows a technique to determine the thin film structure, especially the interfacial structure between the thin films and their substrates x-ray absorption fine structure is a powerful mode.
机译：通过X射线吸收研究了分别通过质量选择离子束沉积在硅上生长的两个立方氮化硼（c-BN）薄膜（厚度为80 nm）和通过磁控溅射技术在硅上涂覆了金刚石薄膜的硅薄膜。 B K边缘的近边缘光谱（XANES）。记录在荧光产量（FY）中的XANES的角度依赖性表明，在顶部c-BN薄膜和Si衬底之间的界面层处，sp_2键合的涡轮层BN（t-BN）基面的优选取向为垂直于或接近垂直于基材，这与先前的透射电子显微镜分析一致。还使用角度依赖性来显示，沉积在金刚石涂层的Si上的膜在其膜-衬底界面处比在Si衬底上的膜具有更高的相对有序t-BN量。这项工作显示出一种确定薄膜结构，尤其是薄膜与其基材之间的界面结构的技术的X射线吸收精细结构是一种有力的模式。

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  • 来源
    《Journal of Materials Research》 |2006年第1期|p.147-152|共6页
  • 作者

    X.T. Zhou; T.K. Sham; C.Y. Chan;

  • 作者单位

    Department of Chemistry, University of Western Ontario, London, Ontario, Canada N6A 5B7;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
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