Determination of band gap in polycrystalline Si/Ge thin film multilayers

S. Tripathi; R. Brajpuriya; C. Mukharjee

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Determination of band gap in polycrystalline Si/Ge thin film multilayers

机译：多晶硅/锗薄膜多层带隙的测定

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The valence band (VB) photoemission supported by ultraviolet-visible-near infrared spectroscopy techniques were used to determine the band gap values of polycrystalline Si and Ge single layers as well as of Si/Ge multilayer structures. The band gap values obtained from VB photoemission measurements for these structures were found to be much larger than their corresponding bulks and to match well with those determined from standard optical absorption measurements. In each case, the VB offset values were obtained by considering the corresponding VB maximum as a reference. The increase in band gap in case of thin single layers of Si and Ge with respect to bulks were interpreted in terms of quantum confinement effect, while in case of multilayer sample, the effect of various factors such as (i) intermixing leading to the formation of SiGe alloy, (ii) roughness at the interface, (iii) particle size, and (iv) strain seem to play an important role in the observed change in band gap.

机译：紫外可见近红外光谱技术支持的价带（VB）光发射用于确定多晶Si和Ge单层以及Si / Ge多层结构的带隙值。发现从这些结构的VB光发射测量获得的带隙值比其相应的体积大得多，并且与根据标准光学吸收测量确定的带隙值非常匹配。在每种情况下，通过将相应的VB最大值作为参考来获得VB偏移值。 Si和Ge的薄单层相对于块体的带隙增加是根据量子约束效应来解释的，而在多层样品的情况下，各种因素的影响，例如（i）混合导致形成SiGe合金的特性，（ii）界面粗糙度，（iii）粒径和（iv）应变似乎在观察到的带隙变化中起重要作用。

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《Journal of Materials Research》 |2006年第3期|p.623-631|共9页
作者
S. Tripathi; R. Brajpuriya; C. Mukharjee;
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University Grant Commission-Department of Atomic Energy Consortium for Scientific Research, University Campus, Indore-452017, India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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Determination of band gap in polycrystalline Si/Ge thin film multilayers

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