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首页> 外文期刊>Journal of Materials Research >Electron energy-loss spectroscopy study of a multilayered SiO_x and SiO_xC_y film prepared by plasma-enhanced chemical
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Electron energy-loss spectroscopy study of a multilayered SiO_x and SiO_xC_y film prepared by plasma-enhanced chemical

机译：等离子增强化学法制备的多层SiO_x和SiO_xC_y膜的电子能量损失谱研究

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摘要

A multilayered structure of SiO_x and SiO_xC_y on silicon substrate was prepared by plasma-enhanced chemical vapor deposition from gas mixtures of hexamethyldisiloxane and oxygen. Scanning transmission electron microscopy studies showed that the structure is well defined with distinct layers. The distributions of Si, C, and O were measured via electron energy-loss spectroscopy. We found that the elements C, Si, and O interdiffuse quite differently across the interfaces. The Si-L_(2,3) energy-loss near-edge structures in the SiO_x and SiO_xC_y layers were different from those of pure Si, SiC, and Si_3N_4, which all contain a tetrahedral structure unit. Slight variations of the relative ratio of the first two sharp peaks at about 108 and 115 eV were found, which can probably be attributed to C partially substituting O atoms in the Si-0 tetrahedral structure.
机译：通过从六甲基二硅氧烷和氧气的气体混合物中进行等离子体增强化学气相沉积，在硅基板上制备了SiO_x和SiO_xC_y的多层结构。扫描透射电子显微镜研究表明，该结构具有清晰的层数。硅，碳和氧的分布通过电子能量损失光谱法测量。我们发现元素C，Si和O在界面之间的扩散非常不同。 SiO_x和SiO_xC_y层中的Si-L_（2,3）能量损失近边缘结构不同于纯Si，SiC和Si_3N_4，它们都包含四面体结构单元。发现前两个尖峰的相对比率在约108和115 eV处有轻微变化，这可能归因于C部分取代了Si-0四面体结构中的O原子。

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