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Patterning of sapphire substrates via a solid state conversion process

机译:通过固态转换工艺对蓝宝石衬底进行构图

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摘要

Nanopatterned sapphire substrates offer the potential for improved performance of devices based on III-V nitrides, e.g., light-emitting diodes and laser diodes. Due to the chemical stability and hardness of sapphire, however, surface patterning is a time-consuming and expensive process. Therefore, a novel method was utilized, whereby a surface coating of Al was deposited on a sapphire substrate and patterned into an array of square mesas using e-beam lithography. The lateral dimensions of each mesa were approximately 400 x 400 nm, and the average height was approximately 100 nm. The metallic film was subsequently subjected to an oxidation treatment at 450 deg C for 24 h (a heat treatment which had previously been shown to minimize hillock formation). For the second heat treatment, which is necessary to induce migration of the sapphire interface and hence achieve solid state conversion, a range of temperatures (800-1350 deg C) was explored. Results showed that for a heat-treatment time of 1 h, pattern retention was achieved for annealing temperatures less than or equal to 1250 deg C. Successful epitaxial conversion of the patterned mesas to sapphire was confirmed using electron backscatter diffraction.
机译:纳米图案的蓝宝石衬底具有改善基于III-V氮化物的器件(例如发光二极管和激光二极管)性能的潜力。然而,由于蓝宝石的化学稳定性和硬度,表面图案化是耗时且昂贵的过程。因此,利用了一种新颖的方法,其中将Al的表面涂层沉积在蓝宝石衬底上,并使用电子束光刻将其图案化成正方形台面阵列。每个台面的横向尺寸约为400 x 400 nm,平均高度约为100 nm。随后将金属膜在450℃下进行24小时的氧化处理(之前已经显示出使小丘形成最小化的热处理)。对于第二热处理(这是诱导蓝宝石界面迁移并因此实现固态转化所必需的),研究了一定范围的温度(800-1350摄氏度)。结果表明,在1 h的热处理时间下,退火温度低于或等于1250℃时,可以获得图案保留。使用电子背散射衍射可将图案化的台面成功地外延转化为蓝宝石。

著录项

  • 来源
    《Journal of Materials Research》 |2005年第2期|p.417-423|共7页
  • 作者单位

    Center for Optical Technologies and Department of Materials Science and Engineering Lehigh University, Bethlehem, Pennsylvania 18015;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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