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首页> 外文期刊>Journal of Materials Research >Microstructural evolution during electromigration in eutectic SnAg solder bumps
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Microstructural evolution during electromigration in eutectic SnAg solder bumps

机译：共晶SnAg焊料凸块在电迁移过程中的微观结构演变

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摘要

Microstructural changes induced, by electromigration were studied in eutectic SnAg solder bumps jointed to under-bump metallization (UBM) of Ti/Cr-Cu/Cu and pad metallization of Cu/Ni/Au. Intermetallic compounds (IMCs) and phase transformations were observed during a current stress of 1 X 104 A/cm(2) at 150 degrees C. On the cathode/ substrate side, some of the (Cu-y,Ni1-y)(6)Sn-5 transformed into (Ni-x,Cu1-x)(3)Sn-4 due to depletion of Cu atoms caused by the electron flow. It is found that both the cathode/ chip and anode/chip ends could be failure sites. On the cathode/chip side, the UBM dissolved after current stressing for 22 h, and failure may occur due to depletion of solder. On the anode/chip side, a large amount of (Cu-y,Ni1-y)(6)Sn-5 or (Ni-x,Cu1-x)(3)Sn-4 IMCs grew at the low-current-density area due to the migration of Ni and Cu atoms from the substrate side, which may be responsible for the electromigration failure at this end.
机译：研究了由电迁移引起的微结构变化，该共晶是在与Ti / Cr-Cu / Cu的凸块下金属化（UBM）和Cu / Ni / Au的焊盘金属化接合的共晶SnAg焊料凸块中进行的。在150摄氏度的电流应力为1 X 104 A / cm（2）的过程中观察到金属间化合物（IMC）和相变。在阴极/衬底侧，一些（Cu-y，Ni1-y）（6 ）Sn-5由于电子流引起的Cu原子耗尽而转变为（Ni-x，Cu1-x）（3）Sn-4。发现阴极/芯片端和阳极/芯片端都可能是故障部位。在阴极/芯片侧，UBM在通电22小时后会溶解，并且由于焊料耗尽而可能发生故障。在阳极/芯片侧，大量（Cu-y，Ni1-y）（6）Sn-5或（Ni-x，Cu1-x）（3）Sn-4 IMC在低电流下生长。由于Ni和Cu原子从基体一侧迁移而引起的高密度区域，这可能是导致此端电迁移失败的原因。

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