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首页> 外文期刊>Journal of Materials Research >Influence of annealing on the 1.5 mu m light emission of Er-doped ZnO thin films and its crystal quality
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Influence of annealing on the 1.5 mu m light emission of Er-doped ZnO thin films and its crystal quality

机译：退火对掺Er的ZnO薄膜1.5μm发光及其晶体质量的影响

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摘要

Intensity variation of 1.5 mu m light emission at room temperature from Er-doped epitaxial and polycrystal ZnO films depending on annealing temperature (773-1373 K) was studied. As-grown Er-doped epitaxial ZnO film emitted 1.5 mu m photoluminescence (PL) higher than as-grown Er-dQped polycrystal ZnO. It was found that the annealing in air increases PL intensity and the maximum PL intensity was obtained by annealing at optimal temperature (1073 K). Spectrum shape and intensity of 1.5 mu m PL of Er-doped epitaxial ZnO after annealing at 1073 K resembled those of Er-doped polycrystal ZnO after annealing at 1073 K. X-ray diffraction measurement demonstrated that annealing improves crystal quality of Er-doped ZnO film. We assumed that the process of 1.5 mu m light emission is dependent on local area placement of Zn and O atoms around Er as well as crystal quality of ZnO.
机译：研究了掺Er外延和多晶ZnO薄膜在室温下1.5μm发光强度随退火温度（773-1373 K）的变化。生长的掺Er外延ZnO薄膜比生长的掺Er dQ掺杂的多晶ZnO发射高1.5μm的光致发光（PL）。发现在空气中退火增加了PL强度，并且通过在最佳温度（1073K）下退火获得了最大PL强度。在1073 K退火后，掺Er外延ZnO的1.5μmPL的光谱形状和强度类似于在1073 K退火后掺Er多晶ZnO的光谱形状和强度。X射线衍射测量表明，退火改善了掺Er ZnO的晶体质量电影。我们假设1.5μm的发光过程取决于Er周围的Zn和O原子的局部位置以及ZnO的晶体质量。

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