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Mechanical properties of ion-implanted amorphous silicon

机译：离子注入非晶硅的机械性能

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We used nanoindentation coupled with finite element modeling to determine the mechanical properties of amorphous Si layers formed by self-ion implantation of crystalline Si at approximately 100 K. When the effects of the harder substrate on the response of the layers to indentation were accounted for, the amorphous phase was found to have a Young's modulus of 136 +- 9 GPa and a hardness of 10.9 +- 0.9 GPa, which were 19 percent and 10 percent lower than the corresponding values for crystalline Si. The hardness agrees well with the pressure known to induce a phase transition in amorphous Si to the denser beta-Sn-type structure of Si. This transition controls the yielding of amorphous Si under compressive stress during indentation, just as it does in crystalline Si. After annealing 1 h at 500 deg C to relax the amorphous structure, the corresponding values increase slightly to 146 +- 9 GPa and 11.6 +- 1.0 GPa. Because hardness and elastic modulus are only moderately reduced with respect to crystalline Si, amorphous Si may be a useful alternative material for components in Si-based microelectromechanical systems if other improved properties are needed, such as increased fracture toughness.
机译：我们将纳米压痕与有限元建模相结合，以确定由大约100 K的晶体Si的自离子注入形成的非晶Si层的机械性能。当考虑到较硬的衬底对压痕响应的影响时，发现非晶态相的杨氏模量为136±9 GPa，硬度为10.9±0.9 GPa，分别比结晶Si的相应值低19％和10％。硬度与在非晶态Si中引起相转变为Si的密集β-Sn型结构的压力相吻合。正如在结晶硅中一样，这种转变控制压痕过程中在压缩应力下非晶硅的屈服。在500摄氏度下退火1小时以放松非晶结构后，相应的值会稍微增加到146±9 GPa和11.6±1.0 GPa。因为相对于结晶硅，硬度和弹性模量仅适度降低，所以如果需要其他改进的特性（例如增加的断裂韧性），则非晶硅可能是基于硅的微机电系统中组件的有用替代材料。

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