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首页> 外文期刊>Journal of Materials Research >A study of nanostructures of thin films in B-C-N system produced by pulsed laser deposition and nitrogen ion-beam-assisted pulsed laser deposition
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A study of nanostructures of thin films in B-C-N system produced by pulsed laser deposition and nitrogen ion-beam-assisted pulsed laser deposition

机译：脉冲激光沉积和氮离子束辅助脉冲激光沉积产生的B-C-N体系薄膜的纳米结构研究

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摘要

We report the synthesis of thin films of B-C-N and C-N deposited by N~+ ion-beam-assisted pulsed laser deposition (IBPLD) technique on glass substrates at different temperatures. We compare these films with the thin films of boron carbide synthesized by pulsed laser deposition without the assistance of ion-beam. Electron diffraction experiments in the transmission electron microscope shows that the vapor quenched regions of all films deposited at room temperature are amorphous. In addition, shown for the first time is the evidence of laser melting and subsequent rapid solidification of B_4C melt in the form of micrometer- and submicrometer-size round particulates on the respective films. It is possible to amorphize B_4C melt droplets of submicrometer sizes. Solidification morphologies of micrometer-size droplets show dispersion of nanocrystallites of B_4C in amorphous matrix within the droplets. We were unable to synthesize cubic carbon nitride using the current technique. However, the formation of nanocrystalline turbostratic carbo- and boron carbo-nitrides were possible by IBPLD on substrate at elevated temperature and not at room temperature. Turbostraticity relaxes the lattice spacings locally in the nanometric hexagonal graphite in C-N film deposited at 600 deg C leading to large broadening of diffraction rings.
机译：我们报道了在不同温度下通过N〜+离子束辅助脉冲激光沉积（IBPLD）技术在玻璃基板上沉积的B-C-N和C-N薄膜的合成。我们将这些膜与通过脉冲激光沉积在没有离子束的辅助下合成的碳化硼薄膜进行比较。透射电子显微镜中的电子衍射实验表明，在室温下沉积的所有薄膜的蒸汽淬火区域都是非晶态的。此外，首次显示的是激光熔化以及随后B_4C熔体以相应的微米和亚微米级圆形颗粒形式快速凝固的证据。可以使亚微米尺寸的B_4C熔滴非晶化。微米级液滴的凝固形态表明，B_4C纳米微晶在液滴内的无定形基质中分散。我们无法使用当前技术合成立方氮化碳。但是，在高温而不是室温下，通过IBLPD可以在衬底上形成纳米晶的涡轮层碳和硼碳氮化物。透平性在600℃下沉积的C-N薄膜中的纳米六角形石墨中局部放宽了晶格间距，从而导致衍射环大大变宽。

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