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首页> 外文期刊>Journal of Materials Research >Effects of properties and growth parameters of doped and undoped silicon oxide films on wear behavior during chemical mechanical planarization process
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Effects of properties and growth parameters of doped and undoped silicon oxide films on wear behavior during chemical mechanical planarization process

机译：掺杂和未掺杂氧化硅膜的性质和生长参数对化学机械平面化过程中的磨损行为的影响

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摘要

Understanding the tribological, mechanical, and structural properties of an inorganic and organic dielectric layer in the chemical mechanical planarization (CMP) process is crucial for successful evaluation and implementation of these materials with copper metallization. Polishing behaviors of different carbon- and fluorine-doped silicon dioxide (SiO_2) low dielectric constant materials in CMP process are discussed in this paper. Films were deposited using both chemical vapor deposition and spin-on method. Carbon and fluorine incorporation in the Si-O network weaken the mechanical integrity of the structure and behave differently in slurry selective to SiO_2 films. Mechanical properties of the films were measured using depth-sensing nanoindentation technique, and it was found that undoped SiO_2 film has the highest and spin-on carbon-doped oxide films have the lowest hardness and modulus values. Wear behavior of the doped SiO_2 is studied in a typical SiO_2 CMP environment, and results are analyzed and compared with those of the undoped SiO_2 films. Coefficient of friction and acoustic emission signals have significant effect on the polishing behavior. Surface of the films are investigated before and after polishing using atomic force microscopy. Roughness and section analysis of the films after polishing show the variation in wear mechanism. Validation of Preston's equation is discussed in this study. Additionally, different wear mechanisms are presented, and a two body abrasion model is proposed for the softer films.
机译：了解化学机械平面化（CMP）过程中无机和有机介电层的摩擦学，机械和结构特性对于成功评估和实现这些材料与铜金属化至关重要。本文讨论了不同的碳掺杂和氟掺杂的二氧化硅（SiO_2）低介电常数材料在CMP工艺中的抛光行为。使用化学气相沉积和旋涂法沉积膜。碳和氟在Si-O网络中的结合会削弱结构的机械完整性，并且在对SiO_2膜具有选择性的浆料中的行为会有所不同。使用深度感应纳米压痕技术测量了薄膜的机械性能，发现未掺杂的SiO_2薄膜具有最高的硬度，而旋涂碳掺杂的氧化物薄膜具有最低的硬度和模量值。在典型的SiO_2 CMP环境下研究了掺杂的SiO_2的磨损行为，并与未掺杂的SiO_2薄膜进行了分析和比较。摩擦系数和声发射信号对抛光行为有重要影响。使用原子力显微镜在抛光前后研究膜的表面。抛光后的膜的粗糙度和截面分析表明磨损机理的变化。本研究讨论了普雷斯顿方程的验证。此外，提出了不同的磨损机理，并针对较软的膜提出了两体磨损模型。

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  • 来源
    《Journal of Materials Research》 |2004年第4期|p.996-1010|共15页
  • 作者

    A. K. Sikder; Ashok Kumar; S. Thagella;

  • 作者单位

    Nanomaterials and Nanomanufacturing Research Center, University of South Florida, Tampa, Florida 33620;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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