• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Materials Research >Field decrystallization and structural modifications of highly doped silicon in a 2.45-GHz microwave single-mode cavity
【24h】

Field decrystallization and structural modifications of highly doped silicon in a 2.45-GHz microwave single-mode cavity

机译：2.45 GHz微波单模腔中高掺杂硅的场去结晶和结构改性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Highly doped n-type silicon powder responds aggressively to a 2.45-GHz microwave E-field, whereas it remains unperturbed in the H-field. In the E-field, after about 30 s of treatment, the silicon powder attained submelting temperatures and thus coagulated to a bulk solid piece. X-ray diffraction analysis of the surface and the cross section of this solid material failed to show any detectable peaks, ascertaining the fact that the material had decrystallized. The Raman spectra of the material had broad and shallow peaks quite different from the thin, sharp lines exhibited by Si wafer. It appears that the E-field treatment has considerably distorted the lattice structure creating lattice strains throughout the sample. These lattice strains were relieved by grinding (recrystallized).
机译：高度掺杂的n型硅粉对2.45 GHz微波电场具有积极的响应，而在H场则不受干扰。在电场中，经过约30 s的处理，硅粉达到了亚熔融温度，因此凝结成块状固体。该固体材料的表面和横截面的X射线衍射分析未能显示任何可检测到的峰，从而确定了该材料已结晶。该材料的拉曼光谱具有宽峰和浅峰，这与Si晶片呈现出的细而尖的线完全不同。看来，电场处理已大大扭曲了晶格结构，从而在整个样品中产生了晶格应变。这些晶格应变通过研磨（重结晶）消除。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号