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Organic n-channels of substituted phthalocyanine thin films grown on smooth insulator surfaces for organic field effect transistors applications

机译：生长在光滑绝缘子表面上的取代酞菁薄膜的有机n沟道，用于有机场效应晶体管应用

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摘要

Thin films of the perfluorinated phthalocyanines F_(16)PcVO and F_(16)PcCu were grown on insulator substrates by physical vapor deposition under high vacuum conditions to study their growth and electrical properties, analyzing them as possible candidates for n-type channel materials in organic field effect transistors. As insulator substrates, mica, amorphous SiO_2, poly(styrene), poly(vinylchloride), poly(vinylcarbazole), poly(methylmetacrylate) and poly(vinylidenefluoride) were chosen, offering chemically different interactions with the molecules, degrees of order, and tribological characteristics. Optical absorption spectroscopy was used to analyze the alignment of the molecules relative to the substrates and the electronic coupling to adjacent molecules in the films. Electrical conduction measurements served to analyze the electronic coupling of the molecules parallel to the insulating substrates and to discuss the growth mode of films. Atomic force microscopy and scanning electron microscopy were chosen to study the morphology of the films. An inclined orientation at an average surface angle between 58 deg and 86 deg dependent on the different substrates was found for both F_(16)Pc. In particular, on mica, thin conductive channels of the organic n-semiconductors could be formed at an average film thickness well below 10 nm at conductivities of up to 1.3 X 10~2 S cm~1. Conductive channels could also be formed on the different polymer substrates at, however, at least an order of magnitude smaller conductivity. Before these layers were formed on the polymers, semiconductor material diffused into the polymer substrates, dependent upon the substrate temperature during deposition relative to the glass transition temperature of the polymers. An influence of the viscous state of the polymer substrates was also seen on the intermolecular coupling detected in optical spectra. Based on these results, implications for the applicability of F_(16)Pc as organic n-channels in organic field effect transistors are discussed.
机译：在高真空条件下，通过物理气相沉积法在绝缘体衬底上生长全氟酞菁F_（16）PcVO和F_（16）PcCu薄膜，以研究其生长和电性能，并分析它们作为n型沟道材料的候选材料。有机场效应晶体管。作为绝缘体基板，选择了云母，无定形SiO_2，聚（苯乙烯），聚（氯乙烯），聚（乙烯基咔唑），聚（甲基丙烯酸甲酯）和聚偏二氟乙烯，它们提供了与分子的化学相互作用，阶数和摩擦学特征。使用光吸收光谱法分析分子相对于基底的排列以及与膜中相邻分子的电子偶联。导电测量用于分析平行于绝缘基板的分子的电子耦合，并讨论膜的生长模式。选择了原子力显微镜和扫描电子显微镜来研究薄膜的形态。对于F_（16）Pc，发现了取决于不同衬底的，在58度和86度之间的平均表面角处的倾斜取向。特别是，在云母上，可以以高达1.3 X 10〜2 S cm-1的电导率，以远低于10 nm的平均膜厚度形成有机n半导体的细导电通道。导电通道也可以在不同的聚合物基底上形成，但是导电率至少小一个数量级。在将这些层形成在聚合物上之前，取决于沉积期间相对于聚合物的玻璃化转变温度的衬底温度，半导体材料扩散到聚合物衬底中。还观察到聚合物基质的粘性状态对在光谱中检测到的分子间偶联的影响。基于这些结果，讨论了F_（16）Pc作为有机场效应晶体管中有机n沟道的适用性。

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  • 来源
    《Journal of Materials Research》 |2004年第7期|p.2040-2048|共9页
  • 作者

    W. Michaelis; D. Wohrle; D. Schlettwein;

  • 作者单位

    Physical Chemistry 1, Institute of Pure and Applied Chemistry, University of Oldenburg, P.O. Box 2503, D-26111 Oldenburg, Germany, and Institute of Organic and Macromolecular Chemistry, University of Bremen, P.O. Box 330440, D-283 34 Bremen, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
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