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Influence of distributed trap states on the characteristics of top and bottom contact organic field-effect transistors

机译:分布陷阱状态对顶部和底部接触有机场效应晶体管特性的影响

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摘要

Numerical simulations of organic field-effect transistors (OFET) of bottom and top contact (BOC, TOC) design with different source/drain contacts were carried out considering an exponential distribution of trap states in the gap of the active layer (a-Si model). For ohmic contacts, the current-voltage characteristics are similar to the trap-free case and there is not much difference between the two designs. However, the currents are lower due to immobile trapped charges, the threshold voltage is shifted, and the inverse subthreshold slope increases due to trap recharging. An analytical approximation for the effective mobility deviates from the simulation up to 20 percent. For low source/drain work function, there occur particular dependencies of the current on the gate voltage for the two designs, which are explained with the internal concentration and field profiles. A series resistance between source and channel causes in the TOC structure an abrupt transition from the gate voltage independent active region into saturation. In the BOC case, the reverse-biased Schottky-type source contact dominates the current. Through simulation of measured characteristics of prepared OFETs based on a modified poly-(phenylene-vinylene), the observed hysteresis is analyzed.
机译:考虑到有源层间隙中陷阱能级的指数分布(a-Si模型),对具有不同源极/漏极触点的底部和顶部触点(BOC,TOC)设计的有机场效应晶体管(OFET)进行了数值模拟)。对于欧姆接触,电流-电压特性类似于无陷阱情况,并且两种设计之间没有太大差异。但是,由于捕获的电荷不可移动,电流较低,阈值电压发生偏移,并且由于陷阱的重新充电,阈值下限的反斜率增大。有效迁移率的解析近似值与模拟的偏差高达20%。对于低源极/漏极功函数,两种设计在电流上都特别依赖于栅极电压,这在内部浓度和场分布中得到了解释。源极和沟道之间的串联电阻会导致TOC结构从与栅极电压无关的有源区突然过渡到饱和状态。在BOC情况下,反向偏置的肖特基型源极触点支配电流。通过模拟基于改性聚(亚苯基-亚乙烯基)制备的OFET的测量特性,对观察到的磁滞进行分析。

著录项

  • 来源
    《Journal of Materials Research》 |2004年第7期|p.2014-2027|共14页
  • 作者单位

    Leibniz Institute for Solid State and Materials Research Dresden, PF 270016, D-01171 Dresden, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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