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首页> 外文期刊>Journal of Materials Research >Ca-doped lead zirconate titanate thin film capacitors on base metal nickel on copper foil
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Ca-doped lead zirconate titanate thin film capacitors on base metal nickel on copper foil

机译：铜箔上贱金属镍上的钙掺杂锆钛酸铅钛酸盐薄膜电容器

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摘要

Ca-doped lead zirconate titanate (52/48) thin film capacitors were prepared on electroless nickel-coated copper foils for embedded capacitor applications. The impact of Ca doping and process parameter variations was studied. Ca addition significantly reduced the temperature coefficient of capacitance. Specifically, the temperature variation was reduced to less than 10% between 300 and 580 K through calcium addition. Optimized capacitance densities and loss tangents were 400 nF/cm(2) and 0.02, respectively. Crystallization temperatures of 600 degreesC yielded these optimized electrical properties, while higher temperatures resulted in interfacial reactions. The influence of oxygen partial pressure during crystallization was also studied. Dielectric properties were sensitive to pO(2), with optimal properties occurring in a narrow pO(2) window centered about 10(-3) Torr. The trends with oxygen pressure were mirrored by changes in phase assemblage. Electrical transport across the dielectric layers was not strongly dependent upon doping level. This insensitivity was attributed to a thin interfacial layer present in all samples. Interface analysis using equivalent circuit analogues showed the nature of the interface to be highly resistive (insulating), rather than semiconducting or conducting.
机译：在用于嵌入式电容器应用的化学镀镍铜箔上制备了掺钙锆钛酸铅钛酸盐（52/48）薄膜电容器。研究了钙掺杂和工艺参数变化的影响。 Ca的添加显着降低了电容的温度系数。具体地，通过添加钙，在300至580K之间，温度变化降低至小于10％。优化的电容密度和损耗角正切分别为400 nF / cm（2）和0.02。 600摄氏度的结晶温度产生了这些优化的电性能，而更高的温度导致了界面反应。还研究了结晶过程中氧分压的影响。介电特性对pO（2）敏感，最佳特性出现在以10（-3）Torr为中心的狭窄pO（2）窗口中。相组成的变化反映了氧气压力的变化趋势。跨介电层的电传输在很大程度上不取决于掺杂水平。这种不敏感性归因于所有样品中都存在薄的界面层。使用等效电路类似物进行的接口分析表明，接口的性质具有高电阻（绝缘）特性，而不是半导体或导电特性。

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