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首页> 外文期刊>Journal of Materials Research >Cross interactions on interfacial compound formation of solder bumps and metallization layers during reflow
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Cross interactions on interfacial compound formation of solder bumps and metallization layers during reflow

机译：回流期间焊料凸块和金属化层的界面化合物形成的相互作用

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摘要

While the dimension of solder bumps keeps shrinking to meet higher performance requirements, the formation of interfacial compounds may be affected more profoundly by the other side of metallization layer due to a smaller bump height. In this study, cross interactions on the formation of intermetallic compounds (IMCs) were investigated in eutectic SnPb, SnAg3.5, SnAg3.8Cu0.7, and SnSbS solders jointed to Cu/Cr-Cu/Ti on the chip side and Au/Ni metallization on the substrate side. It is found that the Cu atoms on the chip side diffused to the substrate side to form (Cu_xNi_(1-x))_6Sn_5 or (Ni_y Cu_(1-y))3Sn)4 for the four solders during the reflow for joining flip chip packages. For the SnPb solder, Au atoms were observed on the chip side after the reflow, yet few Ni atoms were detected on the chip side. In addition, for SnAg3.5 and SnSnS solders, the Ni atoms on the substrate side migrated to the chip side during the reflow to change binary Cu_6Sn_5 into ternary (Cu_xNi_(1-x))_6Sn_5 IMCs, in which the Ni weighed approximately 21 percent. Furthermore, it is intriguing that no Ni atoms were detected on the chip side of the SnAg3.8Cu0.7 joint. The possible driving forces responsible for the diffusion of Au, Ni, and Cu atoms are discussed in this paper.
机译：尽管焊料凸块的尺寸不断缩小以满足更高的性能要求，但由于凸块高度较小，金属化层的另一面可能会更深刻地影响界面化合物的形成。在这项研究中，研究了共晶SnPb，SnAg3.5，SnAg3.8Cu0.7和SnSbS焊料在芯片侧与Cu / Cr-Cu / Ti和Au /共熔时形成金属间化合物（IMC）的相互作用。镍在基材侧金属化。发现芯片侧的铜原子扩散到基板侧，在回流焊倒装过程中形成了四种焊料的（Cu_xNi_（1-x））_ 6Sn_5或（Ni_y Cu_（1-y））3Sn）4芯片封装。对于SnPb焊料，回流后在芯片侧观察到Au原子，而在芯片侧检测到很少的Ni原子。此外，对于SnAg3.5和SnSnS焊料，在回流过程中，基板侧的Ni原子迁移到芯片侧，从而将二元Cu_6Sn_5变为三元（Cu_xNi_（1-x））_ 6Sn_5 IMC，其中Ni的重量约为21百分。此外，有趣的是在SnAg3.8Cu0.7接头的芯片侧未检测到Ni原子。本文讨论了可能引起Au，Ni和Cu原子扩散的驱动力。

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  • 来源
    《Journal of Materials Research》 |2004年第12期|p.3654-3664|共11页
  • 作者

    T.L. Shao; T.S. Chen; Y.M. Huang;

  • 作者单位

    National Chiao Tung University, Department of Material Science & Engineering, Hsin-chu 300 Taiwan, Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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